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贺朝会

博士生导师
硕士生导师
职称：教授
教师姓名：贺朝会
电子邮箱：
学历：博士研究生毕业
性别：男
学位：博士
在职信息：在职
毕业院校：西安交通大学
所属院系：能源与动力工程学院
学科：核科学与技术
同学科/专业博导 同学科/专业硕导
论文
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    1. 贺朝会, 陈伟, 韩建伟, 等. 新型微系统的辐射效应与抗辐射加固技术[J]. 中国科学 物理学 力学 天文学, 2023，https://doi.org/10.1360/SSPMA-2023-0216
    2. Yang Li , Yaxin Guo, Junlin Li, Chaohui He, Zhigang Peng, Jiaxin Liu, Ruibin Li, Hongchao Zhao, Wei Chen , Yonghong Li, Pei Li , and Cen Xiong, Transient Dose Rate Effect Between System-in-Package and Printed Circuit Boards: A Comparative Experimental Study, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 70(8): 2106 -2200, AUGUST 2023
    3. Li Ning, Li Yang, Guo Yaxin, He Chaohui，Simulation analysis of electromagnetic pulse susceptibility and hardening design for system-in-package SZ0501, Microelectronics Reliability 141 (2023) 114892
    4. Guo Yaxin, Li Yang, Li Junlin, He Chaohui, et al., Experimental Study of Transient Dose Rate Effects of Two Level-Shifting Transceivers and Simulations on Their ESD Circuits, IEEE TRANSACTIONS ON NUCLEAR SCIENCE,69 (5): 1157-1166, MAY 2022, DOI: 10.1109/TNS.2022.3140555, WOS:000797421800026
    5. Li Yang, Li Junlin, Guo Yaxin, et al., Experimental Study of Transient Dose Rate Effect on System-in-Package SZ0501, IEEE Transactions on Nuclear Science, 69(8): 1840-1849, 2022，DOI:10.1109/TNS.2022.3189957
    6. Yonghong Li, Weitao Yang, Maocheng Wang, …, Chaohui He, et al., Vulnerability evaluation on 16 nm FinFET Ultrascale+ MPSoC using fault injection and proton irradiation, Microelectronics Reliability 133:114534, June 2022, DOI:10.1016/j.microrel.2022.114534
    7. Pei Li, Chaohui He, Hongxia Guo, et al., Synergistic Effects of Ionizing Dose and Displacement Damage on SiGe Heterojunction Bipolar Transistors, IEEE Transactions on Nuclear Science 69(5):1051-1056, May 2022, DOI:10.1109/TNS.2022.3155639
    8. Jianan Wei, Yang Li, …, Chaohui He, et al., Angular dependence of proton-induced single event transient in silicon-germanium heterojunction bipolar transistors, Chinese Physics B 31(8), March 2022, DOI:10.1088/1674-1056/ac5d32
    9. Pei Li, Hua Dong, …, Chaohui He, et al.,Tolerance of Perovskite Solar Cells under Proton and Electron Irradiation, Materials 15(4):1393, February 2022, DOI:10.3390/ma15041393
    10. Shang Tian, Chaohui He, Huan He, et al., Insight of displacement cascade evolution in gallium arsenide through molecular dynamics simulations, Computational Materials Science 202:111016, February 2022, DOI:10.1016/j.commatsci.2021.111016
    11. Guo Yaxin, Yang Li, Junlin Li, Chaohui He et al., Experimental Study of Transient Dose Rate Effects of Two Level-Shifting Transceivers and Simulations on Their ESD Circuits, IEEE Transactions on Nuclear Science PP(99):1-1, January 2022, DOI:10.1109/TNS.2022.3140555
    12. Wenlong Liao, Chaohui He, Huan He, et al., Electron–phonon coupling factor and electron heat capacity of 6H-SiC, Molecular Simulation 48(8):1-8, December 2021, DOI:10.1080/08927022.2021.2015067
    13. Weitao Yang, Yonghong Li, Chaohui He, et al., Fault injection and failure analysis on Xilinx 16 nm FinFET Ultrascale+ MPSoC, Nuclear Engineering and Technology 54(6), December 2021, DOI:10.1016/j.net.2021.12.022
    14. Weitao Yang, Xue-Cheng Du, Yonghong Li, Chaohui He, et al., Single-event-effect propagation investigation on nanoscale system on chip by applying heavy-ion microbeam and event tree analysis, Nuclear Science and Techniques 32(10), October 2021,  DOI:10.1007/s41365-021-00943-6
    15. Rui Gu, Lei Wang, …, Chaohui He, et al.,Engineering and Microscopic Mechanism of Quantum Emitters Induced by Heavy Ions in hBN, ACS Photonics 8(10), September 2021, DOI:10.1021/acsphotonics.1c00364
    16. Huan He, Wenlong Liao, …, Chaohui He, Stability and interaction of cation Frenkel pair in wurtzite semiconductor materials, Computational Materials Science 196:110554, August 2021, DOI:10.1016/j.commatsci.2021.110554
    17. Yang Li, Yaxin Guo, Chaohui He et al., Simulation studies on the transient dose rate effect of analog delay locked loops, Microelectronics Reliability 121(6):114149, June 2021, DOI:10.1016/j.microrel.2021.114149
    18. Ruibin Li, Junlin Li, Chenghui Wang, Chaohui He, et al., Transient radiation effects in several types of LDO, 4th International Conference on Radiation Effects of Electronic Devices (ICREED), May 2021, DOI:10.1109/ICREED52909.2021.9588675
    19. Jianan Wei, Chaohui He, et al., Impact of Ge Profile on TID Susceptibility of SiGe HBTs, 4th International Conference on Radiation Effects of Electronic Devices (ICREED), May 2021, DOI:10.1109/ICREED52909.2021.9588725
    20. Yang Li, Jianan Wei, Chaohui He, et al., Multiple transient photocurrents coupled simulation based on AD8561 MACRO-SPICE Model, 4th International Conference on Radiation Effects of Electronic Devices (ICREED), May 2021, DOI:10.1109/ICREED52909.2021.9588740
    21. Weitao Yang, Boyang Du, Chaohui He, et al., Reliability Assessment on 16nm Ultrascale+ MPSoC Using Fault Injection and Fault Tree Analysis, Microelectronics Reliability 120:114122, April 2021, DOI:10.1016/j.microrel.2021.114122
    22. Wenlong Liao, Huan He, …, Chaohui He, Effects of electronic energy deposition on pre-existing defects in 6H-SiC, Nuclear Engineering and Technology 53(1-4), January 2021, DOI:10.1016/j.net.2021.01.017
    23. Waseem Khan,Chaohui He*,Yu Cao, Weitao Yang, Design of Geiger Muller detector system for searching lost γ-ray source, Kerntechnik 85(6):461-467, December 2020, DOI:10.3139/124.190031
    24. Tingting Wang, Weitao Yang, …, Chaohui He, et al., Radiation-Resistant CsPbBr 3 Nanoplate-Based Lasers, ACS APPLIED NANO MATERIALS, 3(12):12017-12024 November 2020, DOI:10.1021/acsanm.0c02543
    25. Wen Zhao, Wei Chen, Chaohui He, Rongmei Chen, Liang Wang, Zujun Wang, Peitian Cong, Xiaoqiang Guo & Chen Shen. Prediction of single event upset critical charge and sensitive volume depth by energy deposition analysis of low energy protons, RADIATION EFFECTS AND DEFECTS IN SOLIDS, AUG 2020, WOS:000561972800001, DOI: 10.1080/10420150.2020. 1806838
    26. Huan He, Wenbo Liu, Pengbo Zhang, Wenlong Liao, Dayin Tong, Lin Yang, Chaohui He*, Hang Zang,Hongxiang Zong, Dynamics Studies of Nitrogen Interstitial in GaN from Ab Initio Calculations, Materials, 13, 3627, AUG 2020, WOS: 000568032000001, DOI: 10.3390/ma13163627
    27. Yang, Wei-Tao; Li, Yong-Hong*; Guo, Ya-Xin; Zhao, Hao-Yu; Li, Yang;Li, Pei; He, Chao-Hui; Guo, Gang; Liu, Jie; Yang, Sheng-Sheng，Investigation of single event effect in 28-nm system-on-chip with multi patterns, CHINESE PHYSICS B, 29(10):108504, June 2020, WOS:000575330300001，DOI: 10.1088/1674-1056/ab99b8
    28. Zhao, Wen; Chen, Wei; He, Chaohui; et.al. Mitigating single-event multiple transients in a combinational circuit based on standard cells. MICROELECTRONICS RELIABILITY, 109: 113649, JUN 2020.WOS:000534415700003, DOI: 10.1016/j.microrel.2020.113649
    29. Ruibin Li, Chenhui Wang, Chaohui He, et al., Dependence of decay time of the photocurrent induced by transient ionizing radiation on TID in NPN bipolar transistors, Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms 470:32-37, May 2020, WOS:000525316700006, DOI:10.1016/j.nimb.2020.02.028
    30. Yang, Weitao; Li, Yonghong*; Weidong Zhang, …, Chaohui He, et al., Electron inducing soft errors in 28 nm system-on-chip. RADIATION EFFECTS AND DEFECTS IN SOLIDS ,175(7-8): 745-754,JUL 3 2020. WOS:000532149100001,DOI: 10.1080/10420150.2020.1759067
    31. Wei, JiaNan; Li, Yang; Yang, WeiTao; et.al. Proton-induced current transient in SiGe HBT and charge collection model based on Monte Carlo simulation, SCIENCE CHINA-TECHNOLOGICAL SCIENCES, 63(5): 851-858, MAY 2020, WOS:000521715800001, DOI: 10.1007/s11431-019-1474-x
    32. Wei, Jia-Nan; He, Chao-Hui*; Li, Pei; et al. Impact of layout and profile optimization for inverse-mode SiGe HBT on SET and TID responses. MICROELECTRONICS RELIABILITY, 105:, FEB 2020, IF:1.483, Q3, SCI: WOS:000510971600002, DOI:10.1016/j.microrel.2019. 113561
    33. Waseem Khan,Chaohui He*,Yu Cao,Rashid Khan,Weitao Yang. A detector system for searching lost γ-ray source. Nuclear Engineering and Technology,Volume 52, Issue 7, July 2020, Pages 1524-1531.WOS:000541484900021,DOI: 10.1016/j.net.2019.12.021
    34. Pei Li, ChaoHui He*, HongXia Guo, JinXin Zhang, YongHong Li, JiaNan Wei. Comparison of holes trapping and protons transport induced by low dose rate gamma radiation in oxide on different SiGe processes. MICROELECTRONICS RELIABILITY, 103: 113499, DEC 2019, IF:1.483, Q3, SCI: WOS:000500386300006,DOI: 10.1016/j.microrel.2019.113499
    35. Huan He, Chaohui He* , Jiahui Zhang, Wenlong Liao, Hang Zang, Yonghong Li, Wenbo Liu**.Primary damage of 10 keV Ga PKA in bulk GaN material under different temperatures.Nuclear Engineering and Technology, 52 (2020): 1537-1544. WOS: 000541484900023, DOI: 10.1016/j.net.2019.12.027
    36. Weitao Yang, Yonghong Li, Yang Li, Zhiliang Hu, Fei Xie, Chaohui He*,Songlin Wang,Bin Zhou,Huan He,Waseem Khan, Tianjiao Liang. Single-event effects induced by medium-energy protons in 28 nm system-on-chip. NUCLEAR SCIENCE AND TECHNIQUES, 30(10):151, OCT 2019, IF: 0.961, Q3, SCI: WOS:000488225200007, DOI: 10.1007/s41365-019-0672-5
    37. Hu Zhi-Liang; Yang Wei-Tao; Li Yong-Hong; Li yang; He chaohui；et al. Atmospheric neutron single event effect in 65 nm microcontroller units by using CSNS-BL09. ACTA PHYSICA SINICA , 68(23): 238502, DEC 5 2019, IF:0.643, Q4, SCI: WOS:000501344000033, DOI: 10.7498/aps.68.20191196
    38. Xuecheng Du, Chaohui He*, Shuhuan Liu, Dongyang Luo, Xiaozhi Du, Weitao Yang, Yonghong Li, Yunyun Fan. Analysis of sensitive blocks of soft errors in the Xilinx Zynq-7000 System-on-Chip. Nuclear Instruments & Methods in Physics Research Section A-Accelerators Spectrometers Detectors and Associated Equipment, 940: 125-128, OCT.1 2019, IF: 1.433, Q2, SCI: WOS:000475349600020, DOI: 10.1016/j.nima.2019.06.015
    39. 贺朝会，唐杜，李永宏，臧航.硅材料和二极管的单粒子位移损伤的多尺度模拟研究.原子能科学技术，2019,53（10）：2106-2113.DOI: 10.7538/yzk.2019.youxian.0265
    40. Wei, JN; He, CH*; Li, P; Li, YH; Guo, HX. Impact of displacement damage on single event transient charge collection in SiGe HBTs. Nuclear Instruments & Methods in Physics Research Section A-Accelerators Spectrometers Detectors and Associated Equipment,938:29-35, SEP 11 2019, IF: 1.433,Q2, SCI: WOS:000472016300006,DOI: 10.1016/j.nima.2019.05.098
    41. Khan, Waseem; He, Chao-Hui*; Zhang, Qing-Min; Cao Yu. Design of CsI(TI) detector system to search for lost radioactive source. NUCLEAR SCIENCE AND TECHNIQUES,30(9)：132，SEP 2019, IF: 0.961,Q3, SCI: WOS:000482469600001,DOI: 10.1007/s41365-019-0658-3
    42. Liao, Wenlong; He, Chaohui*; He, Huan. Molecular dynamics simulation of displacement damage in 6H-SiC. RADIATION EFFECTS AND DEFECTS IN SOLIDS,174(9-10): 729-740, OCT 3 2019,IF: 0.636 Q4, SCI: WOS:000479919200001, DOI: 10.1080/10420150.2019.1649260
    43. Yang, Weitao; Li, Yonghong; Li, Yang; Zhiliang Hu, Fei Xie, Chaohui He,Songlin Wang,Bin Zhou,Huan He,Waseem Khan, Tianjiao Liang. Atmospheric neutron single event effect test on Xilinx 28 nm system on chip at CSNS-BL09. MICROELECTRONICS RELIABILITY, 99: 119-124, AUG 2019, IF:1.483, Q3, SCI: WOS:000496833600013, DOI: 10.1016/j.microrel.2019.05.004
    44. Zhang, Jiahui; Liu, Wenbo; Chen, Piheng; He Chaohui. Molecular dynamics study of the interaction between symmetric tilt Sigma 5(210) < 0 0 1 > grain boundary and radiation-induced point defects in Fe-9Cr alloy. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,451: 99-103, JUL 15 2019,IF: 1.255,Q3, SCI: WOS:000472984300020, DOI: 10.1016/j.nimb.2019.05.014
    45. Wei, JN; He, CH; Li, P; Li, YH ; Guo, HX. Impact of proton-induced alteration of carrier lifetime on single-event transient in SiGe heterojunction bipolar transistor. CHINESE PHYSICS B, 28(7): 076106, JUL 2019, IF: 1.469, Q3, SCI: WOS:000476831600006, DOI: 10.1088/1674-1056/28/7/076106
    46. Zhao, Wen; He, Chaohui; Chen, Wei; Single-Event Double Transients in Inverter Chains Designed With Different Transistor Widths. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 66(7): 1491-1499, JUL 2019, IF: 1.455, Q2, SCI: WOS:000476782600019, DOI: 10.1109/TNS.2019.2895610
    47. Li, Ruibin; Wang, Chenhui; Chen, Wei;He Chaohui. Synergistic Effects of TID and ATREE in Vertical NPN Bipolar Transistor. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 66(7): 1566-1573, JUL 2019, IF: 1.455, Q2, SCI: WOS:000476782600028, DOI: 10.1109/TNS.2019.2909690
    48. Yang, Weitao; Du, Xuecheng; Guo, Jinlong; Wei, Junze; Du, Guanghua; He, Chaohui*; Liu, Wenjing; Shen, Shuaishuai; Huang, Chengliang; Li, Yonghong; Fan, Yunyun. Preliminary single event effect distribution investigation on 28 nm SoC using heavy ion microbeam. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 2019, 450:323-326, IF: 1.255, Q3, SCI: WOS:000474501400066, DOI: 10.1016/j.nimb.2018.09.038
    49. Li, Ruibin; He, Chaohui*; Chen, Wei; Contrast of latch-up induced by pulsed gamma rays in CMOS circuits after neutron irradiation and TID accumulation. MICROELECTRONICS RELIABILITY, 98: 42-48, JUL 2019, IF:1.483, Q3, SCI: WOS:000472692700006, DOI: 10.1016/j.microrel.2019.04.015
    50. Khan, Waseem; He, Chaohui*; Cao, Yu. HPGe detector efficiencies for extended sources using the Monte Carlo method. RADIATION EFFECTS AND DEFECTS IN SOLIDS,174(5-6): 548-558, JUN 3 2019, IF: 0.636,Q4, SCI: WOS:000474639500014, DOI: 10.1080/10420150.2019.1619733
    51. Liu, Yan; Chen, Wei; He, Chaohui; Analysis of displacement damage effects on bipolar transistors irradiated by spallation neutrons. CHINESE PHYSICS B, 28(6): 067302, JUN 2019, IF: 1.469,Q3,SCI: WOS:000471648500002,DOI: 10.1088/1674-1056/28/6/067302
    52. Wei, Jia-Nan; He, Chao-Hui*; Li, Pei; Li, Yong-Hong. Research on SEE mitigation techniques using back junction and p(+) buffer layer in domestic non-DTI SiGe HBTs by TCAD. CHINESE PHYSICS B, 28(6): 068503,JUN 2019, IF: 1.469,Q3, SCI: WOS:000471658600002, DOI: 10.1088/1674-1056/28/6/068503
    53. Zong, Pengfei; Cao, Duanlin; Cheng, Yuan; He chaohui; Carboxymethyl cellulose supported magnetic graphene oxide composites by plasma induced technique and their highly efficient removal of uranium ions. CELLULOSE, 26(6): 4039-4060, APR 2019, IF: 4.379, Q1, SCI: WOS:000464849500029,DOI: 10.1007/s10570-019-02358-4
    54. Wei,JN;He,CH*;Li,P;Li,YH;G, HX. Simulation of substrate contact effects on heavy ion-induced current transient in SiGe HBT. MICROELECTRONICS RELIABILITY, 95: 28-35, APR 2019, IF:1.483, Q3, SCI: WOS:000464479300004,DOI: 10.1016/j.microrel.2019.02.011
    55. Li, Ruibin; He, Chaohui*; Chen, Wei; Impact of TID on latch up induced by pulsed irradiation in CMOS circuits. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 440: 95-100, FEB 1 2019,IF: 1.255,Q3, SCI: WOS:000456352200015, DOI: 10.1016/j.nimb.2018.11.036
    56. Khan, Waseem; He, Chaohui*. Calibration of HPGe Detector Efficiencies With Self-Absorption Correction of Gas Sphere Sources. JOURNAL OF NUCLEAR ENGINEERING AND RADIATION SCIENCE,5(1): 011018, JAN 2019, SCI: WOS:000457710900023, DOI: 10.1115/1.4041338
    57. Wei, JN; Guo, HX; Zhang, FQ; He, CH*; Ju, AA; Li, YH. Single event effects in commercial FRAM and mitigation technique using neutron-induced displacement damage. MICROELECTRONICS RELIABILITY, 92: 149-154, JAN 2019, IF:1.483, Q3, SCI: WOS:000456760500018,DOI: 10.1016/j.microrel.2018.12.004
    58. Khan W, He C, Cao Y. Coincidence summing correction for cylinder and Marinelli beaker sources by Monte Carlo simulation. International Journal of Atomic and Nuclear Physics. 2019, 4:011. doi.org/10.35840/2631-5017/2511. (IF = 0.85)
    59. Khan W, He C, Cao Y. Calculation of self-absorption and coincidence summing correction factors for the extended sources using GEANT4. Radioprotection. 2019, 54(2), 133–140.https://doi.org/10.1051/radiopro/2019006. (0.54)
    60. 何 欢，贺朝会，廖文龙，张家辉，臧 航，柳文波.GaN中质子辐照损伤的分子动力学模拟研究.原子能科学技术，2019，53(6):1117-1121
    61. Zong, Pengfei; Cao, Duanlin; Cheng, Yuan;He Chaohui. Enhanced performance for Eu(iii) ion remediation using magnetic multiwalled carbon nanotubes functionalized with carboxymethyl cellulose nanoparticles synthesized by plasma technology. INORGANIC CHEMISTRY FRONTIERS,5(12): 3184-3196, DEC 1 2018, IF: 5.934, Q1, SCI: WOS: 000452114200024,DOI: 10.1039/c8qi00901e
    62. Du, Xiaozhi; Luo, Dongyang; He, Chaohui; A Fine-Grained Software-Implemented DMA Fault Tolerance for SoC Against Soft Error. JOURNAL OF ELECTRONIC TESTING-THEORY AND APPLICATIONS, 34(6): 717-733,DEC 2018, IF: 0.676,Q4, SCI: WOS:000451435700009, DOI: 10.1007/s10836-018-5757-2
    63. Xu, Mengxuan; Chen, Liang; Liu, Bo; He Chaohui; Effects of photonic crystal structures on the imaging properties of a ZnO:Ga image converter. OPTICS LETTERS, 43(22): 5647-5650, NOV 15 2018, IF: 3.866,Q1, SCI: WOS:000450159700040, DOI: 10.1364/OL.43.005647
    64. Shen Shuai-Shuai; He Chao-Hui*; Li Yong-Hong. Non-ionization energy loss of proton in different regions in SiC. ACTA PHYSICA SINICA,67(18): 182401, SEP 20 2018, IF: 0.644,Q4, SCI: WOS:000445538300004,DOI: 10.7498/aps.67.20181095
    65. Zhao Wen, He Chaohui, Chen, Wei, Chen Rongmei, Cong Peitian, Zhang Fengqi, Wang Zujun Shen Chen, Zheng Lisang, Guo Xiaoqiang. Single-event multiple transients in guard-ring hardened inverter chains of different layout designs. MICROELECTRONICS RELIABILITY, 2018.8, 87: 151-157, IF: 1.483, Q3,SCI: WOS:000441856500017, DOI:10.1016/j.microrel. 2018.06.014
    66. Zhang, Jin-xin; Guo, Qi; Guo, Hong-xia; He Chaohui. Investigation of enhanced low dose rate sensitivity in SiGe HBTs by Co-60 gamma irradiation under different biases. MICROELECTRONICS RELIABILITY, 84: 105-111, MAY 2018, IF: 1.483, Q3, SCI: WOS:000431939000012,DOI: 10.1016/j.microrel.2018.03.007
    67. Y.Y. Fan, X.D. Cai, C.H. He, et al. On-Orbit Single Event Effect of the Digital Signal Processor of the Alpha Magnetic Spectrometer and Discrepancy Analysis for the Rate Prediction [J]. IEEE Transactions on Nuclear Science, 2018, 65(5): 1-7, IF: 1.455, Q2,SCI: WOS: 000432470500008, DOI: 10.1109/TNS.2018.2826538
    68. Xu, Mengxuan; Chen, Liang; Yao, Zhiming;He Chaohui; Transient Radiation Imaging Based on a ZnO:Ga Single-Crystal Image Converter. SCIENTIFIC REPORTS, 8: 4178, MAR 8 2018, IF: 4.525, Q1, SCI: WOS:000426825900013, DOI: 10.1038/s41598-018-22615-z
    69. Liu, W. B.; Zhang, J. H.; Ji, Y. Z.;He, C.H.; Comparative study of He bubble formation in nanostructured reduced activation steel and its coarsen-grained counterpart, JOURNAL OF NUCLEAR MATERIALS, 500: 213-219, MAR 2018, IF: 2.547,Q1, SCI: WOS: 000425108100024,DOI: 10.1016/j.jnucmat.2017.12.041
    70. 贺朝会，唐杜，李奎. 多尺度模拟方法在材料位移损伤效应研究中的应用.现代应用物理，2018,9（2）： 060201： 1-5
    71. Du, Xiaozhi, Luo, Dongyang, Shi, Kailun, He, Chaohui, Liu, Shuhuan. FFI4SoC: a Fine-Grained Fault Injection Framework for Assessing Reliability against Soft Error in SoC. JOURNAL OF ELECTRONIC TESTING-THEORY AND APPLICATIONS, FEB 2018,34(1): 15-25, IF: 0.676,Q4, SCI: WOS:000426794800003,DOI: 10.1007/s10836-017-5702-9
    72. Zang, Hang; Cao, Xing-Qing; He, Chao-Hui; Evaluation of interfacial properties in SiC composites using an improved cohesive element method. NUCLEAR SCIENCE AND TECHNIQUES, 29(2): 25, FEB 2018, IF: 0.961,Q3, SCI: WOS:000427326900009, DOI: 10.1007/s41365-018-0365-5
    73. Weitao Yang, Xuecheng Du, Chaohui He, Shuting Shi, Li Cai, Ning Hui, Gang Guo, and Chengliang Huang. Microbeam Heavy-Ion Single-Event Effect on Xilinx 28-nm System on Chip. IEEE Transactions on Nuclear Science, 2018, 65(1): 545-549. IF: 1.455, Q2, SCI: WOS:000422922000005,DOI: 10.1109/TNS.2017.2776244
    74. Khan Waseem, Zhang Qingmin, He Chaohui, Saleh Muhammad. Monte Carlo simulation of the full energy peak efficiency of an HPGe detector. APPLIED RADIATION AND ISOTOPES, JAN 2018,131:67-70, IF:1.343,Q2, SCI:WOS:000419421300011, DOI:10.1016/j. apradiso.2017.11.018
    75. Zhang, Jinxin; Guo, Hongxia; Zhang, Fengqi;He Chaohui; Heavy ion micro-beam study of single-event transient (SET) in SiGe heterjunction bipolar transistor. SCIENCE CHINA-INFORMATION SCIENCES, 60(12): 120404, DEC 2017, IF: 2.731,Q2,SCI: WOS:000419034600014,DOI: 10.1007/s11432-017-9249-6
    76. Li Pei, He Chao-Hui*, Guo Gang, Guo Hong-Xia,Zhang Feng-Qi Zhang Jin-Xin.Heavy Ion and Laser Micro-beam Induced Current Transients in SiGe Hetero-junction Bipolar Transistor. Chin. Phys. Lett, 2017, 34(10): 108501,IF: 1.066, Q2, SCI: WOS:000423242200024, DOI: 10.1088/0256-307X/34/10/108501
    77. Liu, Shuhuan; Du, Xuecheng; Du, Xiaozhi;He Chaohui; Primary investigation the impacts of the external memory (DDR3) failures on the performance of Xilinx Zynq-7010 SoC based system (MicroZed) using laser irradiation. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 406: 449-455, SEP 1 2017, IF: 1.255, Q3, SCI: WOS:000407659500010, DOI: 10.1016/j.nimb.2017.04.053
    78. Pei Li, Mo-Han Liu, Chao-Hui He*, Hong-Xia Guo, Jin-Xin Zhang, and Ting Ma. An Investigation of Ionizing Radiation Damage in Different SiGe Processes. Chin. Phys. B, 26(8): 088503-1-6, 2017, IF: 1.469, Q3, SCI: WOS:000407024700003, DOI: 10.1088/1674-1056/26/8/088503
    79. Zhang, Jin-Xin; He, Chao-Hui*; Guo, Hong-Xia; Three-dimensional simulation of fabrication process-dependent effects on single event effects of SiGe heterojunction bipolar transistor. CHINESE PHYSICS B, 26(8): 088502, AUG 2017, IF: 1.469,Q3, SCI: WOS:000407024700002,DOI: 10.1088/1674-1056/26/8/088502
    80. Zong, Pengfei; Cao, Duanlin; Cheng, Yuan;He Chaohui; Functionally reduced graphene oxide supported iron oxides composites as an adsorbent for the immobilization of uranium ions from aqueous solutions. JOURNAL OF MOLECULAR LIQUIDS, 240: 578-588, AUG 2017, IF: 4.561,Q1, SCI: WOS:000407654700064,DOI: 10.1016/j.molliq.2017.05.101
    81. Bo, Tao; Lan, Jian-Hui; Zhao, Yao-Lin;He Chaohui; First-principles study of water reacting with the (110) surface of uranium mononitride. JOURNAL OF NUCLEAR MATERIALS,492: 244-25, AUG 2017, IF: 2.536, Q1, SCI: WOS:000404701300032, DOI: 10.1016/j.jnucmat.2017.05.026
    82. Pei Li, Chaohui He, Hongxia Guo, Qi Guo, Jinxin Zhang, and Mohan Liu. An Investigation of ELDRS in Different SiGe Processes. IEEE Transactions on Nuclear Science, 2017, 64(5): 1137-1141, IF: 1.455,Q2, SCI: WOS:000401949800005, DOI: 10.1109/TNS.2017.2686429
    83. Xuecheng Du, Shuhuan Liu, Dongyang Luo, Yao Zhang, Xiaozhi Du, Chaohui He, Xiaotang Ren,Weitao Yang, Yuan Yuan. Single event effects sensitivity of low energy proton in Xilinx Zynq-7010 System-on-Chip[J]. Microelectronics Reliability, 2017, 71:65~70 (SCI: ES4OP), IF: 1.447, Q3, SCI: WOS:000399514900009,DOI: 10.1016/j.microrel.2017.02.014
    84. Zong, Pengfei; Cao, Duanlin; Wang, Shoufang; He Chaohui; Synthesis of Fe3O4/CD magnetic nanocomposite via low temperature plasma technique with high enrichment of Ni(II) from aqueous solution. JOURNAL OF THE TAIWAN INSTITUTE OF CHEMICAL ENGINEERS, 70: 134-140, JAN 2017, IF: 3.763,Q1, SCI: WOS:000393002600016, DOI: 10.1016/j.jtice.2016.10.022
    85. Zhao Wen; He Chaohui; Chen Wei; Single Event Effect Characteristics Analysis of Typical Circuit Elements in Spacecraft Power Systems. PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON NUCLEAR ENGINEERING, 2017, VOL 7: V007T10A035, SCI: WOS:000426020600035
    86. Wang SanBing; Xie Qilin; He ChaoHui. Application of The Burnable Poison in The Design of Space Nuclear Reactor. PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON NUCLEAR ENGINEERING, 2017, VOL 3: UNSP V003T13A006, SCI: WOS:000426020100071
    87. Xuecheng Du, Chaohui He*, Shuhuan Liu, Yao Zhang, Yonghong Li and Weitao Yang. Measurement of single event effects induced by alpha particles in the Xilinx Zynq-7010 System-on-Chip[J], Journal of Nuclear Science and Technology, 2017, 54(3):287~292, IF: 1.246, Q2, SCI: WOS:000394716500003,DOI: 10.1080/00223131.2016.1262294
    88. Liu Shuhuan, Du Xuecheng, Du Xiaozhi, Zhang Yao, Mubashiru Lawal Olarewaju,  Luo Dongyang,   Yuan Yuan,  Deng Tianxiang, Li Zhuoqi, Zang Hang,  Li Yonghong, He Chaohui, Ma Yingqi, Shangguan Shipeng. Primary investigation the impact of external memory(DDR3) failure on the performance of Xilinx Zynq-7010 SoC based system(Microzed) using laser irradiation. Nucl. Instr. And Meth. B, 406 (2017) 449–455,IF: 1.255,Q3.
    89. 马婷，张晋新，贺朝会等.不同偏置影响SiGe HBT剂量率效应数值模拟[J].原子能科学技术，2017，51(3)：549-554.
    90. 何博文，贺朝会，申帅帅，陈袁妙梁. 质子在氮化镓中产生位移损伤的Geant4模拟，原子能科学技术，2017，51(3)：543-548.
    91. 杨卫涛, 贺朝会, 杜雪成,等. 片上存储器单粒子翻转效应诊断及修复[J]. 核电子学与探测技术, 2017, 37(2): 138-141
    92. 杜雪成, 贺朝会, 刘书焕，李永宏. 28nm Xilinx Zynq-7000系统芯片单粒子效应研究进展[J].现代应用物理，2017，8（2）：1-6.
    93. Chaohui He*, Xuecheng Du, Shuhuan Liu, Yao Zhang, Yonghong Li, Weitao Yang, et al. Study on Single Event Effects in 28nm System-on-Chip[C]. 2017 International Workshop on Reliability and Radiation Effects of Micro-and Nano-Electronic Devices, 2017.
    94. Weitao Yang, Chaohui He, Xuecheng Du, et al. A SEU Diagnosis and Recovery System for OCM in Xilinx 28-nm System-On-Chip 2017[C]. International Workshop on Reliability and Radiation Effects of Micro-and Nano-Electronic Devices, 2017.
    95. WT. Yang, X. Du, J. Guo, et al. Preliminary SEE Distribution Investigation on 28 nm SoC Using Heavy Ion Microbeam[C]. 23rd International Conference on Ion Beam Analysis. 2017
    96. J.M. Kebwaro, C.H. He, Y.L. Zhao. Reproducibility of (n,c) gamma ray spectrum in Pb under different ENDF/B releases. Nuclear Instruments and Methods in Physics Research B 373 (2016) 1–4. SCI: WOS:000374364900001,DOI: 10.1016/j.nimb.2016.02.028
    97. Li, Kui; Zhao, Yaolin; Zhang, Peng;He Chaohui; Combined DFT and XPS investigation of iodine anions adsorption on the sulfur terminated (001) chalcopyrite surface.  APPLIED SURFACE SCIENCE,390: 412-421, DEC 30 2016, IF:4.281,Q1,SCI: WOS:000385900700052, DOI: 10.1016/j.apsusc.2016.08.095
    98. LI Kui, ZHAO Yao-Lin, DENG Jia, HE Chao-Hui, DING Shu-Jiang, SHI Wei-Qun. Adsorption of Radioiodine on Cu2O Surfaces: a First-Principles Density Functional Study[J]. Acta Phys. -Chim. Sin., 2016,32 (9): 2264-2270. DOI: 10.3866/PKU.WHXB201606141.
    99. 唐杜, 贺朝会*, 臧航, 李永宏, 熊涔, 张晋新, 张鹏, 谭鹏康. 硅单粒子位移损伤多尺度模拟研究[J]. 物理学报, 2016, 65(8): 084209. WOS:000380363400024. DOI: 10.7498/aps.65.084209
    100. 唐杜，贺朝会，熊涔，张晋新，臧航，李永宏，张鹏，谭鹏康. 超低泄漏电流二极管单粒子位移损伤电流计算[J]. 强激光与粒子束, 2016, 28(02): 28026001.
    101. Du Tang, Ignacio Martin-Bragado, Chaohui He*,Hang Zang, Cen Xiong, Yonghong Li,Daxi Guo, Peng Zhang, Jinxin Zhang. Time dependent modeling of single particle displacement damage in silicon devices. Microelectronics Reliability. Volume 60, May 2016, Pages 25–32. WOS:000375516200005. DOI: 10.1016/j.microrel.2016.03.004
    102. Jinxin Zhang, Qi Guo, Hongxia Guo, Wu Lu, Chaohui He*, Xin Wang, Pei Li, and Mohan Liu. Impact of Bias Conditions on Total Ionizing Dose Effects of 60 Co γ in SiGe HBT. IEEE Transactions  on Nuclear  Science, 2016,  63(2): 1251-1258, SCI: WOS: 000375035800021, DOI: 10.1109/TNS.2016.2522158
    103. Guo Daxi, He Chaohui*, Zang Hang, Zhang Peng, Ma Li, Li Tao, Cao Xingqing. Re-evaluation of neutron displacement cross sections for silicon carbide by a Monte Carlo approach, JOURNAL OF NUCLEAR SCIENCE AND TECHNOLOGY, 2016，53（2）：161-172, SCI:WOS:000366209900002.DOI: 10.1080/00223131.2015.1028502
    104. Xuecheng Du, Chaohui He, Shuhuan Liu, Yao Zhang, Yonghong Li, CengXiong, PengkangTan. Soft error evaluation and vulnerability analysis in Xilinx Zynq-7010. Nuclear Instruments and Methods in Physics Research A. 831 (2016) 344–348. DOI: 10.1016/j.nima.2016.04.046, WOS:000382255800061.
    105. Zhang Y, Liu SH, Du XC, at al. Primary single event effect studies on Xilinx 28-nm System-on-Chip (SoC)[J]. Nucl. Instr. And Meth. A,NL., 2016, 831:339~343, (SCI: DU5MM).
    106. Yang WT, He CH, Du XC, et al. Design and simulation of SET and radiation-Harden on PLL[C], Proceeding of 2016 IEEE Advanced Information Management, Communicates, Electronic and Automation Control Conference, 2016: 1457~1461, (EI: 20171403534514).
    107. Cen Xiong, Yonghong Li, Shuhuan Liu, Du Tang, Jinxin Zhang, Chaohui He. Hot carrier effect on a single SiGe HBT's EMI response.        Microelectronics Reliability   2015,55(12): 2627-2633, 2015.12, SCI:WOS:000367773300003,DOI: 10.1016/j.microrel.2015.09.002
    108. Cen Xiong, Shuhuan Liu, Yonghong Li, Du Tang, Jinxin Zhang, Xuecheng Du, Chaohui He. Hot carrier effect on the bipolar transistors’ response to electromagnetic interference. Microelectronics Reliability       2015,55(3-4);514-519      2015.2     CD2PC
    109. Zhang Jin-xin, He Chao-hui, Guo Hong-xia, Tang Du, Xiong Cen, Li Pei, Wang Xin. 3-D simulation study of single event effects of SiGe heterojunctionbipolar transistor in extreme environment.     Microelectronics Reliability, 2015,55(8),1180-1186 2015.7.15        CQ8OH
    110. Wang SB, He CH. Advanced space nuclear reactor with inherent submersion safety. Journal of Nuclear Science and Technology, 2015, 52(12):1504-1511,SCI: WOS:000362845300006, DOI: 10.1080/00223131.2015.1015466
    111. Jeremiah Monari Kebwaro, Yaolin Zhao, Chaohui He.  Investigation of photoneutron and capture gamma-ray production in Pb and W under irradiation from 16N decay radiation. Nuclear Instruments and Methods in Physics Research B,     2015,328:32-37,2015.09.01,CO5AA
    112. Jianqi Xi, Peng Zhang, Chaohui He,Hang Zang, Daxi Guo, Tao Li. The role of point defects in the swelling and elastic modulus of irradiated cubic silicon carbide. Nuclear Instruments and Methods in Physics Research B, 2015,356-357: 62–68
    113. Daxi Guo, Hang Zang, Chaohui He et al. Preliminary studies on the emulation of 14MeV neutron irradiation in SiC with heavy ions. Fusion Engineering and Design, 2015, 100: 274–279       2015.7.10, SCI: WOS:000365055600032 DOI: 10.1016/j.fusengdes.2015.06.085
    114. Yaolin Zhao,Xianghai Zhao,Jia Deng,Chaohui He. Utilization of chitosan–clinoptilolite composite for the removal of radiocobalt from aqueous solution: kinetics and thermodynamics. Journal of Radioanalytical and Nuclear Chemistry, 2015.9.26, DOI:10.1007/s10967 -014-3327-3
    115. Yaolin Zhao, Baofeng Fu, Tao Wu , Xiaoyuan Han , Hai Chaohui He, Yong Luo, Kui Li, Kai Zhang, Jia Deng. Transport of 125I in compacted GMZ bentonite containing Fe-oxides, Fe-minerals or Cu2O. Journal of Radioanalytical and Nuclear Chemistry, 2015.6.18       DOI 10.1007/s10967-015-4430-9
    116. Jeremiah Monari Kebwaro, Yaolin Zhao, Chaohui He.  Design and optimization of HPLWR high pressure Turbine gammaray shield Nuclear Engineering and Design, 2015, 284: 293-299        2015.04.01        WOS:000351966800032    IDS 号: CE6RW
    117. Yaolin Zhao,Pengfei Zong, Yonghong Li,Kui Li, Xianghai Zhao, Hai Wang,Shuhuan Liu, Yubing Sun, Chaohui He. Fabrication of oxidized multiwalled carbon nanotubes for the immobilization of U(VI) from aqueous solutions. Journal of Radioanalytical and Nuclear Chemistry, 2015.4.1        DOI: 10.1007/s10967-015-4015-7
    118. 赵耀林,王海,罗勇,富宝峰,伍涛,贺朝会. 腐殖酸对Re(Ⅶ)在高庙子膨润土中扩散的影响研究.原子能科学技术,      2015,49(6):979-983, 2015.06
    119. Du XC, He CH, Liu SH, et al. Software injection technique for single event effect in embedded system-on chip[C]. International Conference on Radiation Effects of Electronic Devices, Harbin, China, October, 2015
    120. Daxi Guo, Hang Zang, Peng Zhang, Jianqi Xi,Tao Li, Li Ma, Chaohui He, Analysis of primary damage in silicon carbide under fusion and fission neutron spectra，Journal of Nuclear Materials 12/2014 455(s 1–3):229–233
    121. Daxi Guo, Ignacio Martin-Bragado, Chaohui He et al. Modeling of long-term defect evolution in heavy-ion irradiated 3C-SiC: Mechanism for thermal annealing and influences of spatial correlation [J]. Journal of Applied Physics, 2014, 116: 204901 (SCI: AU5IM)
    122. Tang Du, He Chaohui*, Li Yonghong, Zang Hang, Xiong Cen, Zhang Jinxin. Soft error reliability in advanced CMOS technologies—Trends and challenges, SCIENCE CHINA-TECHNOLOGICAL SCIENCES,2014, Volume 57(9): 1846–1857
    123. Jianqi Xi, Peng Zhang, Chaohui He, Mingjie Zheng, Hang Zang, Daxi Guo et al. Evolution of defects and defect clusters in β-SiC irradiated at high temperature [J]. Fusion Science and Technology, 2014, 66: 235-244 (SCI: AN1MX)
    124. Zhang Y, Du X, Du XC, et al. Primary total ionizing dose effect studies on Xilinx SoC irradiated with 60Coγ rays[J]. Applied Mechanics and Materials, 2014, 678:252~259 (EI: 20150300431214).
    125. Maoyi Luo, Xiaolin Hou, Chaohui He, Qi Liu, and Yukun Fan. Speciation Analysis of 129I in Seawater by Carrier-Free AgI –AgCl Coprecipitation and Accelerator Mass Spectrometric Measurement, Analytical Chemistry, 2013, 85 (7): 3715-3722,SCI: WOS: 000317173200038;IDS:120MA
    126. WANG SanBing, HE ChaoHui*. Weight control in design of space nuclear reactor system, SCIENCE CHINA-TECHNOLOGICAL SCIENCES, 2013, 56(10): 2594-2598,SCI: WOS:000325125700028;IDS:227PL
    127. Pengfei Zong, Shoufang Wang, Chaohui He*. Synthesis of kaolinite/iron oxide magnetic composites and their use in the removal of Cd(II) from aqueous solutions. Water Science and Technology, 2013，67（7）：1642-1649, SCI: WOS:000317587800029；IDS:126CB
    128. Hang Zang, Tao Yang, Daxi Guo, Jianqi Xi, Chaohui He*, Zhiguang Wang, Tielong Shen, Lilong Pang, Cunfeng Yao, Peng Zhang. Modifications of SiC under high fluence Kr-ion irradiation at different temperatures. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2013,307：558-561, SCI: WOS: 000321722200123；IDS:182DP
    129. Pengfei Zong, Shoufang Wang, Yaolin Zhao, Hai Wang, Hui Pan, Chaohui He*. Synthesis and application of magnetic graphene/iron oxides composite for the removal of U(VI) from aqueous solutions. Chemical Engineering Journal, Volume 220, 15 March 2013, Pages 45–52, SCI: WOS:000317541200006;IDS:125LL，224Citations
    130. Du Tang, YongHong Li, GuoHe Zhang, ChaoHui He*, YunYun Fan.Single event upset sensitivity of 45 nm FDSOI and SOI FinFET SRAM. Science China Technological Sciences, March 2013, Volume 56, Issue 3, pp 780-785,SCI: WOS:000314913900037;IDS:089ME
    131. Pengfei Zong, Hai Wang, Hui Pan,Yaolin Zhao, Chaohui He*. Application of NKF-6 zeolite for the removal of U(VI) from aqueous solution.Journal of Radioanalytical and Nuclear Chemistry, Volume 295, Issue 3 (2013), Page 1969-1979,SCI: WOS:000314895400049; IDS: 089FJ
    132. Pengfei Zong, Hai Wang, Hui Pan, Chaohui He*.Investigation of sequestration mechanisms of radionuclide 63Ni(II) on kaolinite in aqueous solutions has now been published in the following paginated issue of Journal of Radioanalytical and Nuclear Chemistry,Volume 295, Issue 1 (2013), Page 405-413,SCI: WOS:000312784200054;IDS:060NE
    133. Maoyi Luo, Xiaolin Hou, Weijian Zhou, Chaohui He, Ning Chen, Qi Liu, Luoyuan Zhang. Speciation and migration of 129I in soil profiles. Journal of Environmental Radioactivity, 2013, 118: 30-39,SCI: WOS:000315839000005；IDS:102IT
    134. Weijian Zhou, Ning Chen, XiaolinHou, Luyuan Zhang, Qi Liu, Chaohui He, Yukun Fan, MaoyiLuo, Yaolin Zhao, Zhiwen Wang. Analysis and environmental application of 129I at the Xi’an Accelerator Mass Spectrometry Center. Nuclear Instruments and Methods in Physics Research B, 2013,294:147–151
    135. Hang Zang, Daxi Guo, Tielong Shen, Chaohui He*, Zhiguang Wang, Lilong Pang, Cunfeng Yao, Tao Yang. Investigation of Swelling Induced by Heavy Ion and Neutron Irradiation in SiC. Journal of Nuclear Materials, 2013,433(1-3):378–381,SCI: WOS:000316153800048；IDS:106OG
    136. Jianqi Xi, Chaohui He, Hang Zang, Daxi Guo et al. Evolution of atoms with special coordination number in β-SiC with temperature [J]. Journal of Nuclear Materials, 2013, 435: 236-240(SCI: 115QV)
    137. Pengfei Zong, Zhiqiang Guo, Chaohui He*, Yaolin Zhao, Shuhuan Liu, Hai Wang and Hui Pan. Impact of environmental conditions on the sequestration of radionuclide 60Co(II) at Ca-rectorite/water interface. Journal of Radioanalytical and Nuclear Chemistry, 2012,293(1): 289-297, DOI: 10.1007/s10967-012-1758-2; SCI: 958HW
    138. Peng Zhang, Yong Lu, Chao-hui He, Ping Zhang. First-principles study of the incorporation and diffusion of helium in cubic zirconia. Journal of Nuclear Materials, vol.50, pp. 3297-3302, 2011. doi:10.1016/j.jnucmat. 2011.06.025，SCI：850XS
    139. Peng Zhang, Shuang-Xi Wang, Jian Zhao, Chao-Hui He, Ping Zhang. First-principles study of H2 adsorption and dissociation on Zr（0001）. Journal of Nuclear Materials. doi:10.1016/j.jnucmat. 2011.06.029，SCI：850XS
    140. Peng Zhang; Bao-tian Wang; Chao-Hui He; Ping Zhang，First-principles study of ground state properties of ZrH2, Computational Materials Science. doi:10.1016/j.commatsci. 2011.06.016，SCI：825AA
    141. Chaohui He, Xiaolin Hou,Yaolin Zhao et.al., 129I Level in Seawater near a Nuclear Power Plant Determined by Accelerator Mass Spectrometer, Nuclear Instruments and Methods in Physics Research A 632 (2011) 152-156, doi: 10.1016/j.nima.2010.12.182，SCI：730QL，EI：20110513641380，15 Citations
    142. 杨莹,王三丙,贺朝会. 压水堆中嬗变99Tc和129I的计算研究[J]. 原子能科学技术, 2013, 47(11): 2077-2084.EI: 20135017089057
    143. 郭达禧，贺朝会，臧航，席建琦，马梨，杨涛，张鹏. Geant4模拟中子在碳化硅中产生的位移损伤[J]. 原子能科学技术, 2013, 47(7): 1222-1228. EI：20133516679425
    144. Jianqi Xi, Peng Zhang, Chaohui He, Hang Zang, Daxi Guo, Li Ma. Evolution of defects and defect clusters in β-SiC irradiated at high temperature. 16th  International Conference on Fusion Reactor Materials,Oct. 20-26,2013, Beijing
    145. Daxi Guo, Hang Zang, Tao Li, Jianqi Xi, Peng Zhang,Tao Yang,Chaohui He. Damage Production in Silicon Carbide in Fission and Fusion Spectra. 16th  International Conference on Fusion Reactor Materials, Oct. 20-26,2013, Beijing
    146. Hang Zang, Tao Li,Chaohui He, Daxi Guo, Jianqi Xi,  Zhiguang Wang, Tielong Shen, Lilong Pang, Cunfeng Yao. Structure and Optical Property Modifications of SiC under 1.5MeV Si Irradiated at RT and 800℃. 16th  International Conference on Fusion Reactor Materials, Oct. 20-26,2013, Beijing
    147. Maoyi Luo , Xiaolin Hou, Chaohui He, Yaolin Zhao. Speciation Analysis of 129I in Seawater by Carrier-free AgI-AgCl Coprecipitation and AMS Measurement. The 5th East Asia AMS Symposium, Oct. 15-18,2013, Korea
    148. Kui Li, Yaolin Zhao, Chaohui He. A First-principles Study of Radioiodine Adsorption on Cu2O (110): CuO Surface. The 4th East Asia Forum on Radwaste Management, Oct. 14-16,2013,Beijing
    149. Jianqi Xi, Chaohui He, Peng Zhang, Hang Zang, Daxi Guo, Li Ma. Evolution of Defect and Defect Morphology in β-SiC Irradiated at Very High Temperature. 6th Joint International Symposium on Nuclear Science and Technology SJTU-UT-XJTU Joint Workshop, Aug. 11-14,2013, Shanghai
    150. Kui Li, Yaolin Zhao, Peng Zhang, Chaohui He. First-principles Study of Radioiodine Adsorption on Cu2O (111) Surface. 6th Joint International Symposium on Nuclear Science and Technology SJTU-UT-XJTU Joint Workshop, Aug. 11-14,2013, Shanghai
    151. 刘书焕，张鑫，王三丙，赵耀林，贺朝会，吴岳雷，陈伟. Primary Simulation The Yield Of 14c Produced In Pwr During Normal Operation. 21st International Conference on Nuclear Engineering, 2013年7月29-8月2日, 成都
    152. 罗茂益，侯小琳，贺朝会，赵耀林. 海水129I无载体AgI-AgCl共沉淀形态分析和加速器质谱测量方法. 第二届全国核化学与放射化学青年学术研讨会, 2013年11月8-12日, 杭州
    153. 王海，贺朝会，伍涛，赵耀林，李金英. 有机和无机改性膨润土对硒的吸附. 中国核学会2013年学术年会, 2013年9月10日-13日, 哈尔滨
    154. 张璐，贺朝会，陈亮等. 闪烁体薄膜在线测量质子束流强度[J]．核技术，2012,35(1): 21-25
    155. 王三丙,贺朝会. 外中子源驱动式核电源, 核技术, 2011,(4):313-316
    156. 胡志良，贺朝会，张国和，郭达禧. 超深亚微米SOI NMOSFET中子位移损伤数值模拟[J]. 原子能科学技术, 2011,45(4):456-460，EI：20112714112744
    157. 胡志良，贺朝会.4H-SiC NMOS电子、质子辐照数值模拟[J]. 强激光与粒子束, 2011,23(4):1-4，EI：20112314043864
    158. 胡志良，贺朝会，工艺参数对SOI NMOS总剂量效应的影响，核技术，2010，33(10)：779-782
    159. 张园园，赵耀林，张国和，贺朝会．埋氧层陷阱电荷对深亚微米SOI NMOSFETs重离子单粒子效应的影响[J/OL]．中国科技论文在线，2012，http://www.paper.edu.cn/index.php /default/releasepaper/content/201201-434
    160. Li Yonghong, He Chaohui,Xia chunmei, Simulation of Heavy Ion Source-Drain Penetration Effect in SOI MOS and bulk MOS, Proceedings of the 18th International Conference on Nuclear Engineering(ICONE18-29782) May 17-21, 2010, Xi'an, China，EI：20114014385924
    161. Zhiwen Wang, Chaohui He, Huaibin Li, et al., Measurement of 129I level around a Nuclear Power Plant by Accelerator Mass Spectrometer , Proceedings of the 18th International Conference on Nuclear Engineering(ICONE18-29976) May 17-21, 2010, Xi'an, China，EI：20114014385984
    162. 李永宏, 赵耀林, 唐杜, 贺朝会.130 nm 体硅SRAM和SOI SRAM器件单粒子翻转3D模拟与分析[J/OL].中国科技论文在线, http://www.paper.edu.cn/index.php/default/ releasepaper/content/201201-860.
    163. 彭振驯 张鹏 贺朝会，一种复合型核电池的理论设计，核技术，2010， 33(4)：308-311
    164. W.J.Zhou, X.L.Hou, N. Chen, L.Y.Zhang, Q.Liu, C.H.He,etc. Preliminary study of radioisotope 129I application in China using Xi’an Accelerator Mass Spectrometer, INCS News,25th Issue,Volume VII, No.1:8-23, 2010.
    165. 李永宏,贺朝会,周辉. 应用锎源实验结果预估空间轨道单粒子翻转率.原子能科学技术, 2009,43(11)：1029-1033. EI:20095012535841
    166. Zhiwen Wang, Huaibin Li, Chaohui He,Ning Chen, Qi Liu, Luyuan Zhang, Maoyi Luo,Yukun Fan, Wangguo Liang ,Yunchong Fu. Measurement of 129I in Seawater near a Nuclear Power Plant by Accelerator Mass Spectrometer. The 3rd East Asian Symposium on Accelerator Mass Spectrometry, October 19-22, 2009, Xi'an, China
    167. He Chaohui, Zhao Yaolin, Wang Haifeng et al., Xi’an Accelerator Mass Spectrometer and its Application in the Measurement of Iodine Isotope in Seawater. 2nd Joint International Symposium on Nuclear Science and Technology. Tokai, Japan, March 21-23, 2009
    168. Li Yonghong, He Chaohui, Zhao Fazhan,Guo Tianlei, Liu Gang, Han Zhengsheng, Liu Jie, Guo Gang, Experimental study on heavy ion single event effects in SOI SRAMs. Nucl. Instr. And Meth. B267(1):83-86,2009, doi:10.1016/j.nimb. 2008.10.082/. SCI: 408SF; EI:20090411876774
    1. 任学明,贺朝会.空间轨道单粒子翻转率预估的小样本法[J].原子能科学技术,2009,43(2)：165-169. EI:20091412017512
    2. 张鹏，贺朝会.次临界裂变热源与同位素衰变热源比较分析.中国核学会2009年学术年会，2009年11月17－20日，北京
    3. 彭振驯 张鹏 贺朝会，一种复合型同位素电池的理论设计 [J/OL]. 中国科技论文在线，http://www.paper.edu.cn/paper.php?serial_number=200904-555，第二届全国核技术及应用研究学术研讨会，绵阳，2009年5月18-23日
    4. 王海峰，李怀斌，赵耀林，贺朝会.加速器质谱法测定核电站排水口水样中的129I[J/OL]. 中国科技论文在线，http://www.paper.edu.cn/paper.php?serial_number=200809-818；第四届全国环境放射化学会议学术研讨会，2009年5月11-15日，西安，陕西
    5. 夏春梅, 贺朝会. MOSFET重离子源漏穿通效应的二维数值模拟[J/OL]. 中国科技论文在线，http://www.paper.edu.cn/paper.php?serial_number=200804-912
    6. He Chao-Hui, Li Yong-Hong. Progress in Single Event Effects Simulation Experiments in XJTU. 1st Joint International Symposium on Nuclear Science and Technology. Xi’an, China, March 17-19, 2008
    7. 李永宏,贺朝会. 80C196单粒子效应测试系统[J/OL].中国科技论文在线, http://www. paper.edu.cn/paper.php?serial_number=200703-520
    8. He Chao-Hui, Li Yong-Hong. Experimental study on radiation effects in floating gate read-only-memories and static random access memories. Chinese Physics,2007,16(9):2773 -2778，收录号：SCI: 209MM
    9. 贺朝会，李永宏，杨海亮.单粒子效应辐射模拟实验研究进展.核技术，2007，30(4): 347-351,收录号：EI20072010603516
    10. 何宝平，周荷琴，郭红霞，贺朝会，周辉，李永宏，CMOS器件总剂量效应的理论模拟，原子能科学技术，2006，40（4）：486-489，收录号：EI 064310200569
    11. 贺朝会，杨秀培，张卫卫等.应用α源评估静态存储器的软错误.原子能科学技术，2006，40(Suppl.):192-195,收录号：EI 064910289091
    12. 贺朝会，郭刚，李永宏等. SRAM重离子微束单粒子效应实验研究. 科技导报社.中国科协2005年学术年会论文集:以科学发展观促进科技创新（中）.北京：中国科学技术出版社，2005：662－667
    13. 贺朝会，耿斌，李永宏等，大规模集成电路单粒子闭锁测试系统，核电子学与探测技术, 25(6): 724-728，2005，收录号：EI 05519605763
    14. 李永宏，贺朝会，杨海亮等，可编程逻辑器件在存储器辐射效应测试系统中的应用，核电子学与探测技术, 25(5): 559-562, 2005，收录号：EI 05449454198
    15. He Chaohui, Li Yonghong, Geng Bin et al., Mechanisms of Radiation Effects in Floating Gate ROMs, International Radiation Physics Society Workshop on Frontier Research in Radiation Physics and Related Areas, pp83-87, Chengdu, China, 10-14 November 2004 Sichuan University
    16. 贺朝会，耿斌，黄芳等，真空和辐射环境下的高低温系统,核电子学与探测技术,24(3): 272-274,2004，收录号：EI 04318296988
    17. 贺朝会，耿斌，姚育娟等，大规模集成电路总剂量效应测试方法初探，物理学报,53(1): 194-195,2004,收录号：SCI: 765LR，被他引6次
    18. 贺朝会，耿斌，王燕萍等，浮栅ROM器件辐射损伤机理分析，物理学报，52(9)：2235- 2238,2003,收录号：SCI: 720AE，被他引2次
    19. 贺朝会，耿斌，杨海亮等，浮栅ROM和SRAM抗辐射性能比较分析，电子学报,31(8):1260 -1262,2003，收录号：EI4108052713
    20. 贺朝会，耿斌，王燕萍等，浮栅ROM器件的辐射效应实验研究，物理学报，52(1)：180- 187,2003,收录号：SCI: 644KA/INSPEC:7583236，被他引2次
    21. 郭红霞，韩福斌，陈雨生，周辉，贺朝会，半导体器件硬X射线剂量增强效应研究，核技术，2002，25（10）：811-815，收录号：EI02497258303
    22. 王燕萍，唐本奇，李国政，贺朝会，陈晓华，空间单粒子效应的252Cf辐照模拟测量系统及应用，核技术，2002，25（4）：247-250，收录号：EI 02397116716 
    23. He Chaohui, Geng Bin, Chen Xiaohua et al., Experimental Study on Irradiation Effects in Floating Gate ROMs, Workshop RADECS(Radiation Effects on Components and Systems) 2002 Conference Proceedings, pp147-150, September 19-20, 2002, Padova University, Padova, Italy
    24. He Chaohui, Chen Xiaohua, Li Guozheng, Simulation Calculation for High Energy Proton Single Event Upset Effects, ICM (International Congress of Mathematicians) 2002-Beijing, Satellite Conference on Scientific Computing (Abstracts), pp33-34, August 15-18, 2002, Xi’an Jiaotong University, Xi’an, China
    25. 贺朝会，耿斌，王燕萍等，浮栅ROM器件γ辐射效应实验研究，核电子学与探测技术,22(4):344-347,2002，收录号：INIS: 34-032661，被他引2次
    26. 贺朝会，陈晓华，李国政，高能质子单粒子翻转效应的模拟计算，计算物理，19(4)：367-371,2002，被他引3次
    27. 贺朝会，耿斌，王燕萍等，重离子单粒子翻转截面与γ累积剂量的关系研究，核电子学与探测技术,22(3):228-230,2002，收录号：EI02397111392/CA138：263983/INIS: 33- 061569
    28. 贺朝会，耿斌，王燕萍等，静态随机存取存储器重离子单粒子效应实验研究，核电子学与探测技术,22(2):155-157,2002，收录号：INIS:33-061548，被他引2次
    29. 贺朝会，耿斌，陈晓华等，浮栅ROM器件质子辐射效应实验研究，空间科学学报，22(2): 184-192,2002
    30. 贺朝会，耿斌，杨海亮等，半导体器件单粒子效应的加速器模拟实验研究，强激光与粒子束，14（1）：146－150，2002，收录号：CA ：DN 136:393872/INIS:33-027498/INSPEC: 7233685
    31. 郭红霞, 陈雨生, 张义门, 韩福斌, 贺朝会, 周辉，浮栅ROM器件X射线剂量增强效应实验研究， 物理学报， 2002，51 (10): 2315-2319.收录号：SCI: IDS Number: 609JF
    32. 杨海亮 李国政 姜景和 贺朝会 陈晓华，热释光剂量计监测质子注量，强激光与粒子束， 2001,13(02)：233－236
    33. 杨海亮，李国政，李原春，姜晶和，贺朝会，唐本奇，中子和质子导致的单粒子效应的等效性的蒙特卡罗模拟，原子能科学技术，2001，35（6）：490-495，收录号：EI 02216953030
    34. He Chaohui, Yang Hailiang, Geng Bin et al.，Experimental Study on Single Event Effects in Semiconductor Devices Using Accelerators，Proceedings of the Second Asian Particle Accelerator Conference，pp923-925, September 17-21, 2001, Beijing, China，收录号：INIS:33-023828
    35. 贺朝会，空间轨道单粒子翻转率预估方法研究，空间科学学报，21(3):266-273,2001
    36. 唐本奇，王燕萍，耿斌，陈晓华，贺朝会，杨海亮，功率MOS 器件单粒子烧毁和栅穿效应的252Cf裂变碎片模拟，原子能科学技术，2000，34（4）：339-343，收录号：EI 01396661320
    37. 陈晓华，贺朝会，姬琳等，80C86单粒子效应测试系统及实验研究，原子能科学技术， 34(4)：344-348, 2000，收录号：EIP01396661321/INIS: 31-063140，被他引1次
    38. 贺朝会，陈晓华，李国政，杨海亮，质子单粒子翻转截面计算方法，中国空间科学技术，20（5）：10-16，2000
    39. 贺朝会，杨海亮，耿斌等，静态随机存取存储器质子单粒子效应实验研究，核电子学与探测技术，20（4）：253-257，2000,收录号：INIS: 32-009615/EI00115399696
    40. 贺朝会，陈晓华，李国政，刘恩科等， FLASH ROM 28F256和29C256的14MeV中子辐照实验研究，核电子学与探测技术，20（2）：115-119，2000,收录号：INIS: 31-051957/ EI00095314093，被他引1次
    41. 贺朝会，李国政，罗晋生，刘恩科，CMOS SRAM单粒子翻转效应的解析分析，半导体学报，21（2）：174-178，2000，被他引2次
    42. 贺朝会，耿斌，李国政，刘恩科等，pA量级质子束流测量系统，核电子学与探测技术，20（1）：40-42，2000，收录号：CA132：299843t/INIS: 31-053455/EI00095312740
    43. 贺朝会，陈晓华，刘恩科，李国政等，EEPROM 28C64和28C256的14MeV中子辐照特性，微电子学，29（4）：262-266，1999
    44. 贺朝会，李国政，刘恩科，北京正负电子对撞机次级束模拟质子单粒子效应分析，原子能科学技术，33（2）：175-181，1999，收录号：EI99104807746/CA131：205725k/INIS: 30-024774
    45. 贺朝会，半导体存储器的单粒子效应研究，西安交通大学博士学位论文，1999
    46. 贺朝会，姜景和，李国政，双极晶体管中子辐照效应的计算机模拟，抗核加固，13（2）：73-93,1996
    47. 贺朝会，李国政，一个潜在的高能质子源，试验与研究，20（4）：29-35,1997
    48. 贺朝会，陈晓华，王燕萍，李国政，14MeV中子辐照FLASH ROM的实验研究，试验与研究，21（3）：29-32,1998/第九届全国核电子学与探测技术学术会议文集，21-26,1998,中国电子学会/中国核学会，大连，辽宁,收录号：INIS: 31-053549
    49. 贺朝会，杨海亮，耿斌等，SRAM质子单粒子效应实验研究，第四届卫星抗辐射加固技术学术交流文集：188-194，中国空间技术研究院，1999.9，兰州
    50. 贺朝会，陈晓华，李国政等，硅器件高能质子单粒子翻转截面计算方法，第四届卫星抗辐射加固技术学术交流文集：195-201，中国空间技术研究院，1999.9，兰州
    51. 贺朝会，李国政， CMOS SRAM单粒子翻转过程中的时间因素，第四届卫星抗辐射加固技术学术交流文集：202-208，中国空间技术研究院，1999.9，兰州
    52. 贺朝会 单粒子效应研究的现状和动态，抗核加固，17（1）：82-98，2000
    53. 贺朝会，陈晓华，李国政，高能质子在存储单元灵敏区内沉积能量的模拟计算，第三届计算物理学术会议论文集，197-202，中国计算物理学会，2001.8，乌鲁木齐/高科技研究中的数值计算，第七卷：57-61，2001，科学与工程计算丛书编辑部
    54. 贺朝会，国内单粒子效应实验测试技术分析，第三届全国核仪器应用学术会议论文集：198-202，中国电子学会/中国核学会核电子学与核探测技术分会，2001.9.20-24，广西，桂林
    55. 贺朝会，陈晓华，王燕萍等，浮栅ROM器件的14MeV中子辐照特性，第七届全国抗辐射电子学与电磁脉冲学术交流会论文集（第二分册）：62-68，中国电子学会/中国核学会核电子学与核探测技术分会，抗辐射电子学与电磁脉冲专业委员会，中国工程物理研究院电子工程研究所，2001.11，重庆
    56. 贺朝会，耿斌，陈晓华等，单粒子效应理论与实验研究——卫星抗单粒子效应加固技术研究，“九五”抗辐射加固技术论文集，132-144， 2002.10,优秀论文
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