Molecular beam epitaxy of SrTiO3 on Si (001): Early stages of the growth and strain relaxation
发布时间：2025-04-30
点击次数：
- 发布时间：
- 2025-04-30
- 论文名称：
- Molecular beam epitaxy of SrTiO3 on Si (001): Early stages of the growth and strain relaxation
- 发表刊物：
- Applied Physics Letters
- 摘要：
- The molecular beam epitaxy of SrTiO <sub>3</sub> (STO) layers on Si (001) is studied, focusing on the early stages of the growth and on the strain relaxation process. Evidence is given that even for optimized growth conditions, STO grows initially amorphous on silicon and recrystallizes, leading to the formation of an atomically abrupt heterointerface with silicon. Just after recrystallization, STO is partially strained. Further increase in its thickness leads to the onset of a progressive plastic relaxation mechanism. STO recovers its bulk lattice parameter for thicknesses of the order of 30 ML.
- 合写作者：
- Gang Niu · Guillaume Saint-Girons · Bertrand Vilquin · [...]
- 是否译文：
- 否
- 发表时间：
- 2009-09-01