Growth temperature dependence of epitaxial Gd2O3 films on Si(111)
发布时间：2025-04-30
点击次数：
- 发布时间：
- 2025-04-30
- 论文名称：
- Growth temperature dependence of epitaxial Gd2O3 films on Si(111)
- 发表刊物：
- Microelectronic Engineering
- 摘要：
- This article reports on the epitaxy of crystalline high κ oxide Gd2O3 layers on Si(1 1 1) for CMOS gate application. Epitaxial Gd2O3 thin films have been grown by Molecular Beam Epitaxy (MBE) on Si(1 1 1) substrates between 650 and 750 °C. The structural and electrical properties were investigated depending on the growth temperature. The C–V measurements reveal that equivalent oxide thickness (EOT) equals 0.7 nm for the sample deposited at the optimal temperature of 700 °C with a relatively low leakage current of 3.6 × 10−2 A/cm2 at |Vg − VFB| = 1 V.
- 合写作者：
- G. Niu · B. Vilquin · N. Baboux · [...]
- 是否译文：
- 否
- 发表时间：
- 2009-07-01