Electrical Characteristics of Crystalline Gd2O3 Film on Si (111): Impacts of Growth Temperature and Post Deposition Annealing
发布时间：2025-04-30
点击次数：
- 发布时间：
- 2025-04-30
- 论文名称：
- Electrical Characteristics of Crystalline Gd2O3 Film on Si (111): Impacts of Growth Temperature and Post Deposition Annealing
- 发表刊物：
- MRS Online Proceeding Library Archive
- 摘要：
- This work reports on the epitaxial growth of crystalline high-k Gd2O3 on Si (111) by Molecular Beam Epitaxy (MBE) for CMOS gate application. Epitaxial Gd2O3 films of different thicknesses have been deposited on Si (111) between 650°C~750°C. Electrical characterizations reveal that the sample grown at the optimal temperature (700°C) presents an equivalent oxide thickness (EOT) of 0.73nm with a leakage current density of 3.6×10-2 A/cm2 at |Vg-VFB|=1V. Different Post deposition Annealing (PDA) treatments have been performed for the samples grown under optimal condition. The Gd2O3 films exhibit good stability and the PDA process can effectively reduce the defect density in the oxide layer, which results in higher performances of the Gd2O3/Si (111) capacitor.
- 合写作者：
- Gang Niu · Bertrand Vilquin · Nicolas Baboux · [...]
- 是否译文：
- 否
- 发表时间：
- 2009-12-31