Lattice-matched epitaxial ternary PrxY22xO3 films on SrO-passivated Si (001): Interface engineering and crystallography tailoring
发布时间：2025-04-30
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- 发布时间：
- 2025-04-30
- 论文名称：
- Lattice-matched epitaxial ternary PrxY22xO3 films on SrO-passivated Si (001): Interface engineering and crystallography tailoring
- 发表刊物：
- Applied Physics Letters
- 摘要：
- Rare earth bixbyite oxides (Re2O3) crystallize on Si (001) in 110-orientation due to either lattice mismatch or oxide/Si interface conditions. In this letter, a 1/2 monolayer (ML) SrO layer was employed as an interface engineering approach to achieve epitaxial ternary oxide PrxY2-xO3 (x¼0–2) films on Si (001) with a sharp oxide/Si (001) interface. The passivation layer is stable up to 780℃. A fully lattice-matched Pr0.9Y1.1O3 film was obtained, which still has 110-orientation on Si (001). This allows us to clarify the decisive impact of the interface conditions-rather than lattice mismatch-on the growth orientation of Re2O3 films on Si (001).
- 合写作者：
- G. Niu · P. Zaumseil · M. A. Schubert · [...]
- 是否译文：
- 否
- 发表时间：
- 2013-01-08