Strain analysis in SiN/Ge microstructures obtained via Si-complementary metal oxide semiconductor compatible approach
发布时间：2025-04-30
点击次数：
- 发布时间：
- 2025-04-30
- 论文名称：
- Strain analysis in SiN/Ge microstructures obtained via Si-complementary metal oxide semiconductor compatible approach
- 发表刊物：
- Journal of Applied Physics
- 摘要：
- We have analyzed the strain distribution and the photoluminescence in Ge microstructures fabricated by means of a Si-CMOS compatible method. The tensile strain in the Ge microstructures is obtained by using a SiN stressor layer. Different shapes of microstructure, allowing the Ge layers to freely expand into one, two, or three dimensions, resulted in different strain distribution profiles. Maximal equivalent biaxial tensile strain values up to ∼0.8% have been measured. Room temperature photoluminescence emission has been observed and attributed to direct-band gap recombination spectrally shifted by tensile strain.
- 合写作者：
- G. Capellini · G. Kozlowski · Y. Yamamoto · [6th Gang Niu] ·
- 是否译文：
- 否
- 发表时间：
- 2013-01-07