Epitaxial ferromagnetic oxide thin films on silicon with atomically sharp interfaces
发布时间：2025-04-30
点击次数：
- 发布时间：
- 2025-04-30
- 论文名称：
- Epitaxial ferromagnetic oxide thin films on silicon with atomically sharp interfaces
- 发表刊物：
- Applied Physics Letters
- 摘要：
- A bottleneck in the integration of functional oxides with silicon, either directly grown or using a buffer, is the usual formation of an amorphous interfacial layer. Here, we demonstrate that ferromagnetic CoFe2O4 films can be grown epitaxially on Si(111) using a Y2O3 buffer layer, and remarkably the Y2O3/Si(111) interface is stable and remains atomically sharp. CoFe2O4 films present high crystal quality and high saturation magnetization.
- 合写作者：
- P. de Coux · R. Bachelet · B. Warot-Fonrose · [6th Gang Niu] ·
- 是否译文：
- 否
- 发表时间：
- 2014-07-07