Oxygen Vacancy Induced Room Temperature Ferromagnetism in Pr-Doped CeO2 Thin Films on Silicon
发布时间：2025-04-30
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- 发布时间：
- 2025-04-30
- 论文名称：
- Oxygen Vacancy Induced Room Temperature Ferromagnetism in Pr-Doped CeO2 Thin Films on Silicon
- 发表刊物：
- ACS Applied Materials & Interfaces
- 摘要：
- ABSTRACT: Integration of functional oxides on Si substrates could open a pathway to integrate diverse devices on Si-based technology. Oxygen vacancies (Vo˙˙) can strongly affect solid state properties of oxides, including the room temperature ferromagnetism (RTFM) in diluted magnetic oxides. Here, we report a systematical study on the RTFM of oxygen vacancy engineered (by Pr3+-doping) CeO2 epitaxial thin films on Si substrates. High quality, mixed single crystalline Ce1-xPrxO2-δ (x=0-1) solid solution films were obtained. The Ce ions in CeO2 with a fluorite structure show a Ce4+-dominant valence state in all films. The local crystal structures of the films were analyzed in detail. Pr doping creates both Vo˙˙ and PrO8-complex defects in CeO2 and their relative concentrations vary with the Pr-doping level. The RTFM properties of the films reveal a strong dependence on the relative Vo˙˙ concentration. The RTFM in the films initially increases with higher Pr-doping level due to the increase of F+ center (Vo˙˙ with one occupied electron) concentration and completely disappears when x>0.2, where the magnetic polaron concentration is considered to decline below the percolation threshold thus long-range FM order can no longer be established. We thus demonstrate the possibility to directly grow RTFM Pr-doped CeO2 films on Si substrates which can be an interesting candidate for potential magneto-optic or spintronic device applications.
- 合写作者：
- Gang Niu · Erwin Hildebrandt · Markus Andreas Schubert · [...]
- 是否译文：
- 否
- 发表时间：
- 2014-09-25