Hexagonal GdScO3: An epitaxial high-κ dielectric for GaN
发布时间：2025-04-30
点击次数：
- 发布时间：
- 2025-04-30
- 论文名称：
- Hexagonal GdScO3: An epitaxial high-κ dielectric for GaN
- 发表刊物：
- Semiconductor Science and Technology
- 摘要：
- GdScO 3 was deposited by pulsed laser deposition on two different templates suitable for III-N growth: metalorganic vapour phase epitaxial GaN (0 0 0 1) on sapphire and molecular beam epitaxial Y 2 O 3 on Si (1 1 1). The structure and crystallinity of the layers were determined as well as the band gap and permittivity of the material. It was found that GdScO 3 grows epitaxially and crystallizes hexagonally in contrast to the usually found orthorhombic or amorphous phases. A band gap and permittivity κ of 5.2 eV and 24 were found, respectively, making GdScO 3 a promising epitaxial gate dielectric for III-N transistor applications.
- 合写作者：
- A Schäfer · A Besmehn · M. Luysberg · [8th Gang Niu] ·
- 是否译文：
- 否
- 发表时间：
- 2014-07-01