Observation of field emission from GeSn nanoparticles epitaxially grown on silicon nanopillar arrays
发布时间：2025-04-30
点击次数：
- 发布时间：
- 2025-04-30
- 论文名称：
- Observation of field emission from GeSn nanoparticles epitaxially grown on silicon nanopillar arrays
- 发表刊物：
- Nanotechnology
- 摘要：
- We apply molecular beam epitaxy to grow GeSn-nanoparticles on top of Si-nanopillars patterned onto p-type Si wafers. We use X-ray photoelectron spectroscopy to confirm a metallic behavior of the nanoparticle surface due to partial Sn segregation as well as the presence of a superficial Ge oxide. We report the observation of stable field emission current from the GeSn-nanoparticles. We prove that field emission can be enhanced by preventing GeSn nanoparticles oxidation or by breaking the oxide layer through electrical stress. Finally, we show that GeSn/p-Si junctions have a rectifying behavior.
- 合写作者：
- Antonio Di Bartolomeo* · Maurizio Passacantando · Gang Niu* · [...]
- 卷号：
- 27(48)
- 页面范围：
- 485707
- 是否译文：
- 否
- 发表时间：
- 2016-11-01