Selective growth of fully relaxed GeSn nano-islands by nanoheteroepitaxy on patterned Si(001)
发布时间：2025-04-30
点击次数：
- 发布时间：
- 2025-04-30
- 论文名称：
- Selective growth of fully relaxed GeSn nano-islands by nanoheteroepitaxy on patterned Si(001)
- 发表刊物：
- Applied Physics Letters
- 摘要：
- In this letter, we explore in detail the potential of nanoheteroepitaxy to controllably fabricate high
quality GeSn nano-structures and to further improve the crystallinity of GeSn alloys directly grown
on Si(001). The GeSn was grown by molecular beam epitaxy at relatively high temperatures up to
750 C on pre-patterned Si nano-pillars embedded in a SiO2 matrix. The best compromise between
selective GeSn growth and homogenous Sn incorporation of 1.4% was achieved at a growth temperature
of 600 C. X-ray diffraction measurements confirmed that our growth approach results in
both fully relaxed GeSn nano-islands and negligible Si interdiffusion into the core of the nanostructures.
Detailed transmission electron microscopy characterizations show that only the small GeSn/
Si interface area reveals defects, such as stacking faults. Importantly, the main part of the GeSn
islands is defect-free and of high crystalline quality. The latter was further demonstrated by photoluminescence
measurements where a clear redshift of the direct CC-CV transition was observed
with increasing Sn content.
- 合写作者：
- Viktoria Schlykow, Wolfgang M. Klesse, Gang Niu*, Noriyuki Taoka, Yuji Yamamoto,
- 卷号：
- 109
- 页面范围：
- 202102
- 是否译文：
- 否
- 发表时间：
- 2016-11-14