Selective epitaxy of InP on Si and rectification in graphene/InP/Si hybrid structure
发布时间：2025-04-30
点击次数：
- 发布时间：
- 2025-04-30
- 论文名称：
- Selective epitaxy of InP on Si and rectification in graphene/InP/Si hybrid structure
- 发表刊物：
- ACS Applied Materials & Interfaces
- 摘要：
- The epitaxial integration of highly heterogeneous material systems with silicon (Si) is a central topic in (opto-)electronics owing to devices applications. InP could open new avenues for the realization of novel devices such as high mobility transistors in next generation CMOS or efficient lasers in Si photonics circuitry. However, the InP/Si heteroepitaxy is highly challenging due to the lattice (~8%), thermal expansion mismatch (~84%), and the different lattice symmetries. Here, we demonstrate the growth of InP nanocrystals showing high structural quality and excellent optoelectronic properties on Si. Our CMOS-compatible innovative approach exploits the selective epitaxy of InP nanocrystals on Si nanometric seeds obtained by the opening of lattice-arranged Si nano-tips embedded in a SiO2 matrix. A graphene/InP/Si-tip heterostructure was realized on obtained materials, revealing rectifying behavior and promising photodetection. This work presents a significant advance towards the monolithic integration of graphene/III-V based hybrid devices onto the mainstream Si technology platform.
- 合写作者：
- Gang Niu · Giovanni Capellini · Fariba Hatami ·et al.
- 卷号：
- 8
- 页面范围：
- 26948-26955
- 是否译文：
- 否
- 发表时间：
- 2016-09-19