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Identify the critical regions and switching/failure mechanisms in non-filamentary RRAM (a-VMCO) by RTN and CVS techniques for memory window improvement
发布时间：2025-04-30
点击次数：
- 发布时间：
- 2025-04-30
- 论文名称：
- Identify the critical regions and switching/failure mechanisms in non-filamentary RRAM (a-VMCO) by RTN and CVS techniques for memory window improvement
- 发表刊物：
- 2016 IEEE International Electron Devices Meeting (IEDM)
- 合写作者：
- J. Ma; Z. Chai; W. Zhang; B. Govoreanu; J. F. Zhang; Z. Ji; B. Benbakhti; G. Groeseneken; M. Jurczak
- 卷号：
- 1
- 是否译文：
- 否
- 发表时间：
- 2016-12-03
- 上一条：Probing the Critical Region of Conductive Filament in Nanoscale HfO2 Resistive-Switching Device by Random Telegraph Signals
- 下一条：RTN-based defect tracking technique: Experimentally probing the spatial and energy profile of the critical filament region and its correlation with HfO2 RRAM switching operation and failure mechanism
