发布时间：2025-08-12

文章标题：ASS: Broadband synaptic photoresponse in epitaxial Te/GaN hybrid-heterojunction

内容：

Broadband synaptic photoresponse induced by the charged planar Te interlayer in epitaxial Te/GaN hybrid-heterojunction 

Applied Surface Science 705, 1 October 2025, 163492 

 

Highlights

• Te/GaN hybrid-heterojunction with charged planar Te interlayer has been proposed and realized for broadband synaptic photoresponse.

• Large-scale high-quality Te-GaN(0001) samples were grown by using UHV PVD method.

• Optoelectronic transport measurements confirmed self-powered broadband photoresponse and synaptic plasticity.

• First-principles calculations elucidated that the charged Te layer is induced by the polarization of GaN(0001).

This work was finished mainly by Wenmin Li, , who is currently a Ph.D. student.