Gallium ion implantation greatly reduces thermal conductivity and enhances electronic one of ZnO nanowires
发布时间：2025-04-30
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- 发布时间：
- 2025-04-30
- 论文名称：
- Gallium ion implantation greatly reduces thermal conductivity and enhances electronic one of ZnO nanowires
- 发表刊物：
- AIP Adv.
- 摘要：
- The electrical and thermal conductivities are measured for individual zinc oxide
(ZnO) nanowires with and without gallium ion (Ga+) implantation at room temperature.
Our results show that Ga+ implantation enhances electrical conductivity
by one order of magnitude from 1.01 × 10^3 Ohm^−1m^−1 to 1.46 × 10^4 Ohm^−1m^−1 and
reduces its thermal conductivity by one order of magnitude from 12.7 Wm^−1K^−1 to
1.22 Wm^−1K^−1 for ZnO nanowires of 100 nm in diameter. The measured thermal
conductivities are in good agreement with those in theoretical simulation. The increase
of electrical conductivity origins in electron donor doping by Ga+ implantation
and the decrease of thermal conductivity is due to the longitudinal and transverse
acoustic phonons scattering by Ga+ point scattering. For pristine ZnO nanowires,
the thermal conductivity decreases only two times when its diameter reduces from
100 nm to 46 nm. Therefore, Ga+-implantation may be a more effective method than
diameter reduction in improving thermoelectric performance.
- 合写作者：
- M. G Xia*, Z. F. Cheng, J. Y. Han, M. R. Zheng, C. H. Sow, et al.
- 卷号：
- 4
- 页面范围：
- 057128
- 是否译文：
- 否
- 发表时间：
- 2014-05-27