Anomalous junctions characterized by Raman spectroscopy in Si x Ge1 x nanowires
发布时间：2025-04-30
点击次数：
- 发布时间：
- 2025-04-30
- 论文名称：
- Anomalous junctions characterized by Raman spectroscopy in Si x Ge1 x nanowires
- 发表刊物：
- Appl. Phys. Lett.
- 摘要：
- The characterization of junctions in nanowires by high-resolution transmission electron microscopy with spherical aberration correction is tricky and tedious. Many disadvantages also exist, including
rigorous sample preparation and structural damage inflicted by high-energy electrons. In this work, we present a simple, low-cost, and non-destructive Raman spectroscopy method of characterizing anomalous junctions in nanowires with axially degraded components. The Raman spectra of
SixGe1x nanowires with axially degraded components are studied in detail using a confocal micro-Raman spectrometer. Three Raman peaks (Si–Si~490 cm^-1, Si–Ge~400 cm^-1, and Ge–Ge~284 cm^-1) up-shift with increased Si content. This up-shift originates in the bond compression induced by a confined effect on the radial direction of nanowire. The anomalous junctions
in SixGe1-x nanowires with axially degraded components are then observed by Raman spectroscopy and verified by transmission electron microscopy energy-dispersive X-ray spectroscopy. The anomalous junctions of SixGe1x nanowires with axially degraded components are due to the vortex flow of inlet SiH4 and GeH4 gas in their synthesis. The anomalous junctions can be used as raw
materials for fabricating devices with special functions.
- 合写作者：
- M. G. Xia*, J. Y. Han, Z. F. Cheng, C. P. Liang, and S. L. Zhang
- 卷号：
- 105
- 页面范围：
- 101902
- 是否译文：
- 否
- 发表时间：
- 2014-09-05