发布时间：

2026-03-23

影响因子：

6.9

DOI码：

10.1016/j.apsusc.2026.165967

论文名称：

The role of sulfur supersaturation in the growth of single-crystalline MoS2 on stepped sapphire

发表刊物：

APPLIED SURFACE SCIENCE

摘要：

Step-guided growth has emerged as a scalable pathway for synthesizing non-centrosymmetric 2D TMD single crystals. A key challenge arises when nucleation kinetically prefers the terraces over the step edges, thereby disrupting epitaxial alignment. Although the epitaxial interface is a critical factor, it is ultimately the thermodynamic driving forces that are essential for overcoming the kinetic barrier to step-edge nucleation; however, a fundamental understanding of these forces has been lacking. Herein, we demonstrated that the sulfur supersaturation provides a strong driving force for adatom on terrace planes to diffuse toward step edges, completely suppressing terrace nucleation and achieving near-unity unidirectional alignment in wafer-scale molybdenum disulfide (MoS2). This thermodynamic control enables deterministic morphological evolution from 2D flakes to 1D nanoribbons. The synthesized single-crystalline MoS2 exhibits exceptional uniformity and room-temperature mobility up to 91 cm2/V & sdot;s. This work provides valuable insights into the growth mechanisms underlying CVDgrown MoS2 single crystals on stepped sapphire and solves the persistent challenge of step-edge decoupling during terrace-dominated nucleation, enhancing material quality and reproducibility for TMD single-crystal electronics.

合写作者：

韩晓娜,L. N. Chen,S. D. He,S. J. Duan,Q. Lou

第一作者：

程瞾芳

论文类型：

期刊论文

通讯作者：

M. G. Xia

论文编号：

001677268200005

文献类型：

J

卷号：

727

页面范围：

165967

是否译文：

否

发表时间：

2026-01-16

收录刊物：

SCI