发布时间：

2026-03-23

影响因子：

3.6

DOI码：

10.1063/5.0313734

论文名称：

Plasma-induced symmetric ambipolar transport in MoS2/WSe2 p-n heterojunctions via stacking-order-mediation

发表刊物：

APPLIED PHYSICS LETTERS

摘要：

Ambipolar semiconductors based on two-dimensional p-n junctions have attracted significant attention and are driving optoelectronic and logic circuit applications. However, their low carrier mobility and electron-hole mobility asymmetry (>10(1)) result in poor signal resolution, which limits its practical applications. This study demonstrates high-mobility and mobility-symmetric ambipolar transport in MoS2/WSe2 p-n heterojunctions through precise oxygen plasma-mediated interface engineering. The mild oxygen plasma treatment simultaneously passivates selenium vacancies in WSe2 and sulfur vacancies in MoS2, thereby reducing scattering centers and optimizing carrier concentrations. The elevated and balanced carrier concentrations on both sides of the junction effectively lower the tunneling barrier, facilitating efficient charge injection and enabling high-performance ambipolar conduction. Analysis of the charge transport mechanism reveals a direct tunneling mode at the heterointerface. By applying a 6 s low-power soft oxygen plasma treatment to MoS2 and a 30 s oxygen plasma to WSe2, the device exhibits a more than two orders of magnitude improvement in electrical performance, demonstrating symmetric ambipolar behavior with a hole mobility of 83 cm(2) V-1 s(-1) and an electron mobility of 42 cm(2) V-1 s(-1), respectively. This work establishes plasma-induced design principles for high-performance ambipolar transistors and provides critical insights for logic optoelectronic devices.

论文类型：

期刊论文

论文编号：

001715550300001

文献类型：

J

卷号：

128

期号：

11

页面范围：

111601

ISSN号：

0003-6951

是否译文：

否

发表时间：

2026-03-16

收录刊物：

SCI

发布期刊链接：

https://pubs.aip.org/aip/apl/article/128/11/111601/3383685/