Epitaxial growth and electrical measurement of single crystalline Pb(Zr0.52Ti0.48)O3 thin film on Si(001) for micro-electromechanical systems
发布时间：2025-04-30
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- 发布时间：
- 2025-04-30
- 论文名称：
- Epitaxial growth and electrical measurement of single crystalline Pb(Zr0.52Ti0.48)O3 thin film on Si(001) for micro-electromechanical systems
- 发表刊物：
- Thin Solid Films
- 摘要：
- We report in this work the epitaxial growth and the electrical characteristics of single crystalline Pb(Zr0.52Ti0.48)O3 (PZT) thin film on SrTiO3(STO)-buffered Si(001) substrate. The STO buffer layer deposited by molecular beam epitaxy allows a coherent oxide/Si interface leading enhanced PZT crystalline quality. 70 nm-thick PZT (52:48) layer was then grown on STO/Si(001) by sol–gel method. X-ray diffraction demonstrates the single crystalline PZT film on Si substrate in the following epitaxial relationship: [110] PZT (001)//[110] STO (001)//[100] Si (001). The macroscopic electrical measurements show a hysteresis loop with memory window of 2.5 V at ± 7 V sweeping range and current density less than 1 μA/cm2 at 750 kV/cm. The artificial domains created by piezoresponse force microscopy with high contrast and non-volatile properties provide further evidence for the excellent piezoelectric properties of the single crystalline PZT thin film.
- 合写作者：
- S. Yin · G. Niu · B. Vilquin · [...]
- 是否译文：
- 否
- 发表时间：
- 2012-05-01