Interface Electronic Structure in a Metal/Ferroelectric Heterostructure under Applied Bias
发布时间：2025-04-30
点击次数：
- 发布时间：
- 2025-04-30
- 论文名称：
- Interface Electronic Structure in a Metal/Ferroelectric Heterostructure under Applied Bias
- 发表刊物：
- Physical Review B
- 摘要：
- The effective barrier height between an electrode and a ferroelectric (FE) depends on both macroscopic electrical properties and microscopic chemical and electronic structure. The behavior of a prototypical electrode/FE/electrode structure, Pt/BaTiO3/Nb-doped SrTiO3, under in-situ bias voltage is investigated using X-Ray Photoelectron Spectroscopy. The full band alignment is measured and is supported by transport measurements. Barrier heights depend on interface chemistry and on the FE polarization. A differential response of the core levels to applied bias as a function of the polarization state is observed, consistent with Callen charge variations near the interface.
- 合写作者：
- J. E. Rault · G. Agnus · T. Maroutian · [6th Gang Niu] ·
- 是否译文：
- 否
- 发表时间：
- 2013-02-19