X-ray Photoelectron Spectroscopy and Diffraction investigation of a Metal - Oxide - Semiconductor heterostructure: Pt/Gd2O3/Si (111)
发布时间：2025-04-30
点击次数：
- 发布时间：
- 2025-04-30
- 论文名称：
- X-ray Photoelectron Spectroscopy and Diffraction investigation of a Metal - Oxide - Semiconductor heterostructure: Pt/Gd2O3/Si (111)
- 发表刊物：
- Journal of Crystal Growth
- 摘要：
- Platinum thin films deposited by physical vapour deposition (PVD) on Gd2O3/Si(111) templates are investigated by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and X-ray photoelectron diffraction (XPD). Both XRD and XPD give clear evidence that Gd2O3 grows (111)-oriented and single-domain on Si(111) with mirror epitaxial relationship viz, [1¯ 1 0] Gd2O3 (111) // [11¯0] Si(111). On Gd2O3/Si(111),Pt is partially crystallized with (111) orientation. There are two epitaxial domains and a slightly visible (111) fibre texture. The in-plane relationships of these Pt(111) domains with Gd2O3(111) are a direct one : [11¯0] Pt (111) // [11¯0] Gd2O3 (111) and a mirror one : [1¯ 1 0] Pt (111) // [11¯0] Gd2O3(111). XPS reveals that Pt4f exhibits a metallic behaviour even for small amounts of Pt but very small chemical shifts suggest that Pt environment is different at the interface with Gd2O3. These XPS chemical shifts have been correlated with features in XPD azimuth curves, which could be related with the existence of hexagonal α-PtO2(0001)layer.
- 合写作者：
- D. Ferrah · M. El Kazzi · G. Niu · [...]
- 是否译文：
- 否
- 发表时间：
- 2015-02-01