Post deposition annealing of epitaxial Ce 1−x Pr x O 2−δ films grown on Si(111)
发布时间：2025-04-30
点击次数：
- 发布时间：
- 2025-04-30
- 论文名称：
- Post deposition annealing of epitaxial Ce 1−x Pr x O 2−δ films grown on Si(111)
- 发表刊物：
- Physical Chemistry Chemical Physics
- 摘要：
- In this work the structural and morphological changes of Ce$_{1-x}$Pr$_{x}$O$_{2-delta}$ ($x$ = 0.20, 0.35 and 0.75) films grown on Si(111) due to post depostion annealing are investigated by low energy electron diffraction combined with a spot profile analysis. The surface of the oxide films exhibit mosaics with large terraces separated by monoatomic steps. It is shown that the Ce/Pr ratio and post deposition anealling temperature can be used to tune the mosaic spread, terrace size and step height of the grains. The morphological changes are accompanied by a phase transition from a fluorite type lattice to a bixbyite structure. Furthermore, at high PDA temperatures a silicate formation via a polycrystalline intermediate state is observed.
- 合写作者：
- Henrik Wilkens · Wanja Spieß · Marvin Zoellner · [4th Gang Niu] ·
- 是否译文：
- 否
- 发表时间：
- 2015-03-12