张小宁  (教授)

博士生导师 硕士生导师

电子邮箱:

入职时间:2001-03-12

学历:博士研究生毕业

性别:男

学位:博士

在职信息:在职

毕业院校:西安交通大学

学科:电子科学与技术

论文成果

当前位置: 中文主页 >> 科学研究 >> 论文成果

Plasma spatial distribution manipulation and electrical property enhancement through plasma coupling effect

点击次数:

发布时间:2025-04-30

发布时间:2025-04-30

论文名称:Plasma spatial distribution manipulation and electrical property enhancement through plasma coupling effect

发表刊物:AIP Advances

摘要:Plasma pattern transition in a symmetric hybrid structure cavity device at micrometer scale is researched through microplasma interaction in intervening microchannel between adjacent cavities while manipulating electric field strength. Plasma distribution reconfiguration in central (objective) cavity is observed when sidearm (donor) cavitiesareignited.Aslongascouplingeffectoccurredbymodulatingtheelectricfield strength in the sidearm cavities, stable plasma pattern transition in objective cavity is obtained,exhibitingplasmapatternsplitfromonecircularspot(initialpattern)totwo smallcircularspots(transitedpattern),alongwithplasmapeakemissionintensitydisplacementover100 µmtoitsequilibriumposition.Theshapeoftransitedplasmapatternsaredependingonthecouplingeffectfromsidearmcavities.Thetwocircularspots unsymmetrically distributed if either donor cavity is ignited, and the ratio of average emission intensity between the two plasma spots is over 30%, however, which is less than 4% if coupling symmetrically occurred. The electrical and optical properties of centralmicroplasmaarealsomodulated,thatthebreakthroughvoltageisdecreasedby 22%andemissionintensityisimprovedby∼30%,bymeansofplasmacoupling.The microplasmapatternformationatmicrometrescaleandmanipulationoftheelectrical properties in microscale cavity implies significant value in the application of plasma transistor and signal processing.

合写作者:王耀功,刘凌光,张小宁等

是否译文:

发表时间:2018-10-01

上一条: Bipolar High Voltage Pulse Generator Without H-bridge Based on Cascade of Positive and Negative Marx Generators

下一条: Improvement of electrical characteristics and stability of IGZO TFT through surface single crystallization of IGZO film at room temperature