Improvement of electrical characteristics and stability of IGZO TFT through surface single crystallization of IGZO film at room temperature
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发布时间：2025-04-30
发布时间：2025-04-30
论文名称：Improvement of electrical characteristics and stability of IGZO TFT through surface single crystallization of IGZO film at room temperature
发表刊物：Semiconductor Science and Technology
摘要：The electrical characteristics and stability of indium gallium zinc oxide (IGZO) thin film transistors (TFTs) are improved through surface single crystallization of IGZO film by Cs ions adsorption at room temperature. The experimental results show that the Cs ions can bond with the oxygen ions in IGZO film, changing surface structure of IGZO film from amorphous to a single crystalline. The electrical properties and stability of surface single crystalline IGZO and a-IGZO based thin film transistors were investigated, respectively. With the introduction of the surface single crystalline of the IGZO film, the electrical properties of TFT were greatly improved, showing that the carrier mobility improved from 5.28 cm(2) V(-1)s (-1) to 8.84 cm(2) V (-1)s(-1) , and the threshold voltage deceased from 7.6 V to 2.3 V, accompanied with a leakage current below 10(-15) A. The stability of V-th shifts in surface single crystalline IGZO based TFT was 6.3 V under V-GS = 20 V for 5000 s, improved by similar to 32% compared with that of a-IGZO TFT.
合写作者：Zhang, He; Wang, Yaogong; Zhang, Xiaoning; Liu, Chunliang;
卷号：33(8)
页面范围：085015
是否译文：否
发表时间：2018-08-14