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The Over-Reset Phenomenon in Ta2O5 RRAM Device Investigated by the RTN-Based Defect Probing Technique
发布时间：2025-04-30
点击次数：
- 发布时间：
- 2025-04-30
- 论文名称：
- The Over-Reset Phenomenon in Ta2O5 RRAM Device Investigated by the RTN-Based Defect Probing Technique
- 发表刊物：
- IEEE Electron Device Letters
- 合写作者：
- Zheng Chai; Weidong Zhang; Pedro Freitas; Firas Hatem; Jian Fu Zhang; John Marsland; Bogdan Govoreanu; Ludovic Goux; Gouri Sankar Kar; Steve Hall; Paul Chalker; John Robertson
- 卷号：
- Volume: 39, Issue: 7
- 页面范围：
- 955 - 958
- 是否译文：
- 否
- 发表时间：
- 2018-05-04
