Dr. Yelong Wu has devoted many years to exploring the relationship between the structure and properties of semiconductor materials. His research focuses on uncovering the physical mechanisms that enhance these materials' properties. By analyzing their microscopic atomic structures with high-resolution techniques, Dr. Wu develops detailed microstructural models. He then uses theoretical calculations to investigate how these structures influence performance, ultimately providing strategies for optimizing device efficiency.
Dr. Wu has led two general programs funded by the National Natural Science Foundation of China, along with a youth program from the same foundation and a program from the Shaanxi Natural Science Foundation. He has authored many papers in leading international journals such as Physical Review Letters, Physical Review B, Applied Physics Letters, and the Journal of Physical Chemistry Letters. Additionally, he holds a national invention patent, has received a first prize in science and technology from Shaanxi universities, and has been awarded two first prizes for outstanding academic papers in natural science in Xi'an.
Our research group has been actively investigating the fundamental physical properties of semiconductor materials and their applications in integrated circuits, consumer electronics, communication systems, photovoltaic power generation, lighting, high-power conversion, and various other fields. We are equipped with comprehensive experimental facilities and a robust computing platform that enables the integration of experimental methods with first-principles calculations. Our specific research interests include:
1. Physical Properties of Semiconductor Materials and Device Physics
Physical Mechanisms and Performance Optimization of Energy-Efficient Semiconductor Light-Emitting Materials and Devices
Inverse Design of Novel Semiconductor Optoelectronic Materials
Study the Properties of Semiconductor Alloys and Their Implications for Device Design
2. Semiconductor Defect Physics
The Influence of Point Defects and Extended Defects on the Properties of Semiconductor Materials
The Physics of Semiconductor Heterojunction Interfaces
Structural Design and Surface Modification of Semiconductor Photocatalysts
主持项目 FUNDING
国家自然科学基金 - 面上项目
项目编号:12374074,超宽禁带半导体固溶体合金中p型透明导电氧化物材料设计与计算分析,53万
国家自然科学基金 - 面上项目
项目编号:11874294,基于阳离子替换的纤锌矿演化结构中p型透明导电体的计算与设计,63万
陕西省自然科学基金 - 青年项目
项目编号:2020JQ-005,纤锌矿演化结构中p型透明导电体的计算与设计,3万
西安交通大学 - 自由探索与创新项目
项目编号:xjj2018054,ZnO 高指数面的制备与光电性能研究,15万
国家自然科学基金 - 青年项目
项目编号:11404253,CdTe多晶薄膜中的位错和晶界及其对光电性能的影响研究,24万
National Natural Science Foundation of China
Grant Number: 12374074, Ultra-wide Bandgap Semiconductor Solid Solution Alloy Based p-type Transparent Conductive Oxides: Material Design and Calculation Analysis, ¥530,000
National Natural Science Foundation of China
Grant Number: 11874294, Wurtzite-Derived p-Type Transparent Conducting Oxides via Cation-Transmutation: Computational Analysis and Design, ¥630,000
Natural Science Foundation of Shaanxi Province
Grant Number: 2020JQ-005, Wurtzite-Derived p-Type Transparent Conducting Oxide: Computational Analysis and Design, ¥30,000
Free Exploration and Innovation Program of Xi'an Jiaotong University
Grant Number: xjj2018054, Preparation and Photoelectric Properties of High-Index ZnO Surfaces, ¥150,000
Natural Science Foundation of Shaanxi Province
Grant Number: 11404253, Dislocations and grain boundaries in CdTe polycrystalline thin films and their effects on the electronic properties, ¥240,000