Gate capacitance coupling of singled-walled carbon nanotube thin-film transistors
发布时间：2025-04-30
点击次数：
- 发布时间：
- 2025-04-30
- 论文名称：
- Gate capacitance coupling of singled-walled carbon nanotube thin-film transistors
- 发表刊物：
- Appl. Phys. Lett.
- 摘要：
- The electrostatic coupling between singled-walled carbon nanotube (SWCNT) networks/arrays and planar gate electrodes in thin-film transistors (TFTs ) is analyzed both in the quantum limit with an analytical model and in the classical limit with finite-element modeling. The computed capacitance depends on both the thickness of the gate dielectric and the average spacing between the tubes, with some dependence on the distribution of these spacings. Experiments on transistors that use submonolayer, random networks of SWCNTs verify certain aspects of these calculations. The results are important for the development of networks or arrays of nanotubes as active layers in TFTs and other electronic devices. (c) 2007 American Institute of Physics.
- 合写作者：
- Q. Cao, M. G. Xia, C. Kocabas, et. al.
- 卷号：
- 90
- 页面范围：
- 023516
- 是否译文：
- 否
- 发表时间：
- 2007-01-08
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