Improving electron mobility in MoS2 field-effect transistors by optimizing the interface contact and enhancing the channel conductance through local structural phase transition
发布时间:2025-11-22
点击次数:
- 发布时间:
- 2025-11-22
- 影响因子:
- 6.4
- DOI码:
- 10.1039/d3tc04605b
- 论文名称:
- Improving electron mobility in MoS2 field-effect transistors by optimizing the interface contact and enhancing the channel conductance through local structural phase transition
- 发表刊物:
- Journal of Materials Chemistry C
- 合写作者:
- Wang, Chang'an,Liu, Xuan,Du, Yongbo,Li, Debo,李德波
- 第一作者:
- Lv, Qiang
- 论文类型:
- 期刊论文
- 文献类型:
- J
- 卷号:
- 12
- 期号:
- 8
- 页面范围:
- 2794-2802
- ISSN号:
- 2050-7526
- 是否译文:
- 否
- 发表时间:
- 2024-02-22
- 收录刊物:
- SCI、SCI




