Large-area single-crystal TMDs growth modulated by sapphire substrate
发布时间：2025-04-30
点击次数：
- 发布时间：
- 2025-04-30
- 论文名称：
- Large-area single-crystal TMDs growth modulated by sapphire substrate
- 发表刊物：
- Nanoscale
- 摘要：
- https://pcv3-rsc-live.s3.amazonaws.com/1b27d5594a5ab2ea525e3613b6b8a6/NR_d3nr05400d_edit_report.pdf
Transition metal dichalcogenides (TMDs) have recently attracted extensive research due to their unique physical and chemical properties, but the large-area preparation of TMDs single crystal is still facing a great challenge. Chemical vapor deposition (CVD) is an effective method to synthesize large-area and high-quality TMDs films, in which sapphire as a suitable substrate plays a crucial role in anchoring the source materials, promoting the nucleation and modulating the epitaxial growth. In this review, we provide an insightful overview about different epitaxial mechanisms and growth behaviors associated with the atomic structure of sapphire surface and the growth parameters. Firstly, we summarize three epitaxial growth mechanisms of TMDs on sapphire substrates, which are van der Waals epitaxy, step-guided epitaxy, and dual-coupling-guided epitaxy. Secondly, we introduce the effects of polishing, cutting, and annealing processing of the sapphire surface on the TMDs growth. Finally, we discuss the influence of other growth parameters, such as temperature, pressure, carrier gas, and substrate position on the growth kinetics of TMDs. This review might give deep insight into the controllable growth of large-area single-crystal TMDs on sapphire, which will propel their practical applications in highperformance nanoelectronics and optoelectronics.
- 合写作者：
- L. N. Chen, Z. F. Cheng, S. D. He, X. D. Zhang, K. L. Deng, D. H. Zong, Z. P. Wu, M. G. Xia*
- 卷号：
- 16
- 页面范围：
- 978
- 是否译文：
- 否
- 发表时间：
- 2024-01-18