教授 博士生导师 硕士生导师
张伟教授,国家级特聘教授
材料创新设计中心 主任
Center for Alloy Innovation and Design (CAID)
材料创新设计研究中心
State Key Laboratory For Mechanical Behavior of Materials
金属材料强度国家重点实验室
School of Materials Science and Engineering
材料科学与工程学院
Xi'an Jiaotong University, Xi'an, 710049, China
西安交通大学, 西安, 710049, 中国
联系邮箱:wzhang0@mail.xjtu.edu.cn
My research interests cover phase-change materials for non-volatile memory and neuro-inspired computing, materials desgin and synthesis, large-scale ab initio calculations, machine-learning potentials, electronic and optical properties of chalcogenides as well as phase transitions in complex material systems.
Selected publications:
1. Wei Zhang, A. Thiess, P. Zalden, R. Zeller, P. H. Dederichs, J.-Y. Raty, M. Wuttig*, S. Blügel and R. Mazzarello*, Role of vacancies in metal-insulator transitions of crystalline phase-change materials, Nature Materials 11, 952-956 (2012).
2. F. Rao*, K. Y. Ding, Y.-X. Zhou, Y. H. Zheng, M. J. Xia, S. L. Lv, Z. T. Song*, S. L. Feng, I. Ronneberger, R. Mazzarello, Wei Zhang* and E. Ma, Reducing the stochasticity of crystal nucleation to enable subnanosecond memory writing, Science 358, 1423-1427 (2017).
3. Wei Zhang* and E. Ma*, Phase-change memory: Single-element glass to record data, Nature Materials 17, 654-655 (2018).
4. K. Ding, J.-J. Wang, Y.-X. Zhou, H. Tian, L. Lu, R. Mazzarello, C. Jia, Wei Zhang*, F. Rao* and E. Ma*, Phase-change heterostructure enables ultralow noise and drift for memory operation, Science 366, 210-215 (2019).
5. F. Rao*, Wei Zhang* and E. Ma*, Catching structural transitions in liquids, Science 364, 1032-1033 (2019).
6. Wei Zhang*, R. Mazzarello, M. Wuttig and E. Ma, Designing crystallization in phase-change materials for universal memory and neuro-inspired computing, Nature Reviews Materials 4, 150-168 (2019).
7. X. Fu, X.-D. Wang, B. Zhao, Q. Zhang, S. Sun, J.-J. Wang, Wei Zhang*, L. Gu, Y. Zhang, W.-Z. Zhang, W. Wen, Z. Zhang, L.-q. Chen*, Q. Yu* and E. Ma*, Atomic-scale observation of non-classical nucleation-mediated phase transformation in a titanium alloy, Nature Materials 21, 290–296 (2022).
8. Y.-X. Zhou, Wei Zhang*, E. Ma and V. L. Deringer*, Device-scale atomistic modelling of phase-change memory materials, Nature Electronics 6, 746-754 (2023).
9. X.-Z. Wang, R. Wang, S. Sun, D. Xu, C. Nie, Z. Zhou, C. Wen, J. Zhang, R. Chu, X. Shen, W. Zhou, Z. Song, J.-J. Wang*, En Ma* and Wei Zhang*, Amorphous phase-change memory alloy with no resistance drift, Nature Materials (2025) DOI: 10.1038/s41563-025-02361-0
10. Y. Zhou, D. F. Thomas du Toit, S. R. Elliott, Wei Zhang* and V. L. Deringer*, Full-cycle device-scale simulations of memory materials with a tailored atomic-cluster-expansion potential, Nature Communications 16, 8688 (2025).
