Dependence of tribological behavior of GaN crystal on loading direction: A molecular dynamics study
发布时间：2025-04-30
点击次数：
- 发布时间：
- 2025-04-30
- 论文名称：
- Dependence of tribological behavior of GaN crystal on loading direction: A molecular dynamics study
- 发表刊物：
- Journal of Applied Physics
- 摘要：
- In order to investigate the tribological property of GaN crystal at nano-scale, a series of molecular dynamics simulations of nanoscratch are carried out on the surfaces of c-GaN, a-GaN, and m-GaN. The key factors of scratch depth and scratch direction which greatly influence the deformation behavior are explored by analyzing the mechanical response, surface wear, and subsurface dislocation nucleation. The friction coefficient, wear rate, and total length of dislocations are all found to increase with the increasing of scratch depth. A clear directional dependence could be recognized for c-GaN, where the friction coefficient along the [10-10] direction is always lower than that along the [1-210] direction, and the wear rate along the [10-10] direction is higher than that along [1-210] direction, regardless of scratch depth. On the contrary, the directional dependence of wear rate and friction coefficient are unclear for the a-GaN and m-GaN. For the scratches at a specific depth, dislocations in the c-GaN are smallest in length and occupy the shallow positions close to the surface, while widely distributed dislocations could be observed in the m-GaN.
- 合写作者：
- Yu Qian, Shizhe Deng, Fulin Shang, Qiang Wan, and Yabin Yan
- 是否译文：
- 否
- 发表时间：
- 2019-07-26
- 上一条：弹性力学（第2版）
- 下一条：IN718单晶微柱体锯齿状变形的晶体塑性分析