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An Analytical Switching Loss Model for SiC MOSFET Considering Temperature-Dependent Reverse Recovery Over an Extremely Wide High-Temperature Range

发布时间：2025-04-30 点击次数：

发布时间：2025-04-30

论文名称：An Analytical Switching Loss Model for SiC MOSFET Considering Temperature-Dependent Reverse Recovery Over an Extremely Wide High-Temperature Range

发表刊物：IEEE Transactions on Power Electronics

合写作者：M. Zhu, Y. Pei, F. Yang, Z. Cheng, D. Ma and L. Wang

是否译文：否

发表时间：2024-02-13

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