Room temperature bonding of GaN on diamond wafers by using Mo/Au nano-layer for high-power semiconductor devices
Release Time:2025-04-30
Hits:
- Date:
- 2025-04-30
- Title of Paper:
- Room temperature bonding of GaN on diamond wafers by using Mo/Au nano-layer for high-power semiconductor devices
- Journal:
- Scripta Materialia
- Summary:
- a
- Co-author:
- Kang Wang, Kun Ruan, Wenbo Hu*, Shengli Wu, Hongxing Wang
- Translation or Not:
- No
- Date of Publication:
- 2019-08-24