Tunable Ohmic, p‑Type Quasi-Ohmic, and n‑Type Schottky Contacts of Monolayer SnSe with Metals
发布时间：2025-04-30
点击次数：
- 发布时间：
- 2025-04-30
- 论文名称：
- Tunable Ohmic, p‑Type Quasi-Ohmic, and n‑Type Schottky Contacts of Monolayer SnSe with Metals
- 发表刊物：
- ACS Appl. Nano Mater.
- 摘要：
- Monolayer (ML) SnSe, a p-type IV−VI semiconductor, has
drawn tremendous attention because of its chemical stability, high
electrostatic gating efficiency, and carrier mobility, and it has been
synthesized in different ways. We have comprehensively investigated the
properties of the interfaces between ML SnSe and some regular metals by
using first-principles calculations. Metallization of ML SnSe appears in ML
SnSe−Ag, −Al, −Au, −Cu, and −Cr systems. Lateral n-type Schottky
contacts with electron Schottky barrier heights of 0.42 and 0.32 eV are
formed, respectively, when ML SnSe contacts with metals Ag and Al. Also, a
lateral p-type quasi-ohmic contact with a hole Schottky barrier height of
0.02 eV is formed when ML SnSe contacts with metal Au. Surprisingly, ohmic contacts are formed when ML SnSe contacts with
metals Cr and Cu. Our research not only has a deep understanding of the characteristics of the interfaces between ML SnSe and
the metals but also offers a reference in the electrode selection for ML SnSe devices.
- 合写作者：
- Cheng He, Ming Cheng, Tongtong Li, and Wenxue Zhang
- 卷号：
- 2019, 2, 2767−2775
- 页面范围：
- 2019, 2, 2767−2775
- 是否译文：
- 否
- 发表时间：
- 2019-05-01