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何成

教授

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  • 博士生导师 硕士生导师
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  • 学历: 硕博连读
  • 学位: 博士
  • 学科: 材料科学与工程

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A tunable and sizable bandgap of a g-C3N4/graphene/g-C3N4 sandwich heterostructure:a van der Waals density functional study

发布时间:2025-04-30
点击次数:
发布时间:
2025-04-30
论文名称:
A tunable and sizable bandgap of a g-C3N4/graphene/g-C3N4 sandwich heterostructure:a van der Waals density functional study
发表刊物:
J. Mater. Chem. C
摘要:
The structural and electronic properties of a g-C3N4/graphene/g-C3N4 (g-C3N4/SLG/g-C3N4) sandwich
heterostructure have been systematically investigated using density functional theory with van der Waals
corrections. The results indicate that the band gap of the g-C3N4/SLG/g-C3N4 sandwich heterostructure
can be opened to 106 meV without strain. Applying strain is a promising way to tune the electronic
properties of a sandwich heterostructure. After applying uniaxial strain, the heterostructure can withstand
larger tensile strain than compression strain without damaging the structure and the band gap is more
easily increased by the X-direction strain. When the 5% X-direction strain is applied, the band gap could be
opened to 525 meV and meanwhile maintain a high carrier mobility. These electronic properties may
provide a potential application in nanodevices.
合写作者:
M. M. Dong, C. He * and W. X. Zhang
卷号:
5
页面范围:
5, 3830
是否译文:
发表时间:
2017-04-14