Lowering the Schottky barrier height of G/WSSe van der Waals heterostructures by changing the interlayer coupling and applying external biaxial strain
发布时间：2025-04-30
点击次数：
- 发布时间：
- 2025-04-30
- 论文名称：
- Lowering the Schottky barrier height of G/WSSe van der Waals heterostructures by changing the interlayer coupling and applying external biaxial strain
- 发表刊物：
- PHYSICAL CHEMISTRY CHEMICAL PHYSICS
- 摘要：
- Graphene-based van der Waals (vdW) heterostructures composed of two-dimensional transition metal dichalcogenides (TMDs) and graphene show great potential in the design and manufacture of field effect transistors. However, the Schottky barrier generated by the contact between metal and semiconductor hinders the conduction of electrons, so it is necessary to effectively adjust the Schottky barrier and form a low-resistance Ohmic contact. Based on first-principles calculations, graphene/WSSe (G/WSSe) heterostructures have been established and the corresponding electronic properties have been studied. Firstly, these heterostructures form an n-type Schottky contact with a SBH of 0.35 eV and a p-type Schottky contact with a SBH of 0.66 eV at their respective interfaces. In addition, the Schottky contact can be significantly adjusted by changing the interlayer coupling or applying an external biaxial strain, and an Ohmic contact could also be formed under the biaxial strain. This study not only offers a basic understanding of G/WSSe heterostructures, but also provides a reference for the application of G/WSSe heterostructures in optoelectronic and nanoelectronic devices.
- 合写作者：
- Zhang, WX; Yin, Y and He, C
- 卷号：
- 22（2021）26231-26240
- 页面范围：
- 22（2021）26231-26240
- 是否译文：
- 否
- 发表时间：
- 2020-12-01