何成
- 教授
- Supervisor of Doctorate Candidates
- Supervisor of Master's Candidates
- E-Mail:
- Date of Employment:2009-11-25
- Professional Title:教授
- Status:Employed
- Alma Mater:吉林大学
- College:School Of Materials Science And Engineering
- Discipline:Materials Science and Engineering
- Papers
Electronic properties of blue phosphorene/transition metal dichalcogenides van der Waals heterostructures under in-plane biaxial strains
Release Time:2025-04-30 Hits:
- Date:2025-04-30
- Title of Paper:Electronic properties of blue phosphorene/transition metal dichalcogenides van der Waals heterostructures under in-plane biaxial strains
- Journal:J Solid State Chem.
- Summary:Using first-principles density functional theory, we have investigated the atomic structural and electronic properties of blue phosphorene/transition metal dichalcogenides BP/XT2 (X = Mo, W; T = S, Se) van der Waals (vdW) heterostructures under in-plane biaxial strains. Our results demonstrate that the strain can effectively tune the band gap of BP/XT2 heterostructures and maintain their high carrier mobility. In addition, BP/MoSe2, BP/WS2 and BP/WSe2 vdW heterostructures exhibit indirect-to-direct band gap transitions when the compressive strains reach to the critical values. Moreover, the BP/WT2 (T = S, Se) heterostructures are type-II vdW heterostructures and could be technologically applied as photocatalytic materials. And BP/MoS2 heterostructure undergoes a semiconduction type transition (type-I to type-II) under the external epsilon, which has potential application as an on-off switch in the photocatalytic material. These results show rich behavior of the strain-based in blue phosphorene/transition metal dichalcogenides vdW heterostructures.
- Co-author:W.X. Zhang , W.H. He, J.W. Zhao, C. He*
- Volume:(2018) 265, 257-265
- Page Number:(2018) 265, 257-265
- Translation or Not:No
- Date of Publication:2018-09-01