Epitaxial growth of germanium on silicon using a Gd2O3/Si (111) crystalline template
发布时间：2025-04-30
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- 发布时间：
- 2025-04-30
- 论文名称：
- Epitaxial growth of germanium on silicon using a Gd2O3/Si (111) crystalline template
- 发表刊物：
- Journal of Vacuum Science & Technology A
- 摘要：
- This work presents a study of the epitaxial growth of Ge on Si (111) using a Gd <sub>2</sub> O <sub>3</sub> crystalline template. A smooth two-dimensional Ge layers is obtained from the coalescence of initially three-dimensional Ge islands grown in the Volmer–Weber mode. Ge takes its bulk lattice parameter at the very early stages of its growth. A detailed x-ray pole figure analysis reveals that the epitaxial relationship between the layers and the Si substrate is [1–10] Ge (111)||[-110] Gd <sub>2</sub> O <sub>3</sub>(111)||[1–10] Si (111) and that microtwins are formed in the Ge layer.
- 合写作者：
- G. Niu · L. Largeau · G. Saint-Girons · [...]
- 是否译文：
- 否
- 发表时间：
- 2010-10-01