Temperature-Dependent Reduction of Epitaxial Ce1–xPrxO2−δ (x = 0–1) Thin Films on Si(111): A Combined Temperature-Programmed Desorption...
发布时间：2025-04-30
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- 发布时间：
- 2025-04-30
- 论文名称：
- Temperature-Dependent Reduction of Epitaxial Ce1–xPrxO2−δ (x = 0–1) Thin Films on Si(111): A Combined Temperature-Programmed Desorption...
- 发表刊物：
- The Journal of Physical Chemistry C
- 摘要：
- The inherent properties of epitaxial oxide thin-film layers have attracted the intense interest of different research fields, such as catalysis and microelectronics. The focus of this work is the temperature-dependent oxygen release, oxygen vacancy formation, and lattice rearrangement of Ce1–xPrxO2−δ thin films with systematic stoichiometry variation (x = 0–1) and oxygen deficiency (δ > 0) on Si(111). The mixed oxide layers were heteroepitaxially grown by coevaporating molecular beam epitaxy. To observe the oxygen release, temperature-programmed desorption was performed. Furthermore, laboratory-based X-ray diffraction measurements were carried out after several annealing steps to investigate the crystal structure rearrangement. The contribution of Ce4+/Ce3+ and Pr4+/Pr3+ redox systems to the oxygen release and lattice rearrangement was clarified by X-ray photoelectron spectroscopy. Finally, Raman spectroscopy was performed to detect structural defects in the oxide lattice (i.e., oxygen vacancies and MO8-complexes) and their temperature dependence, which thus provides microscopic insights into the atomic oxygen release mechanism. The oxygen-releasing temperature and the oxygen storage capacity in such Ce1–xPrxO2−δ model thin films can be engineered by the Pr concentration.
- 合写作者：
- Marvin Hartwig Zoellner · Gang Niu · Jin-Hao Jhang · [...]
- 是否译文：
- 否
- 发表时间：
- 2013-11-13