Hexagonal LaLuO3 as high-κ dielectric
发布时间：2025-04-30
点击次数：
- 发布时间：
- 2025-04-30
- 论文名称：
- Hexagonal LaLuO3 as high-κ dielectric
- 发表刊物：
- Journal of vacuum science & technology B
- 摘要：
- Among the different polymorphs of LaLuO3 the hexagonal one is the least explored. Therefore, in this work, hexagonal LaLuO3 is grown and investigated in more detail. Two different growth templates are presented, offering the possibility to stabilize this hexagonal phase: Y2O3 on Si (111) and GaN on Al2O3 (0001). The LaLuO3 layers show smooth surfaces and high crystallinity for both types of templates. Spectroscopic characterization reveals a wide bandgap Eg of 5.6 eV and capacitance voltage measurements display a relative permittivity κ of 26, which makes hexagonal LaLuO3 a promising candidate as a future gate dielectric for devices based on hexagonal semiconductors such as GaN.
- 合写作者：
- Anna Schaefer · Fabian Wendt · Siegfried Mantl · [9th Gang Niu]
- 是否译文：
- 否
- 发表时间：
- 2015-01-01