Papers
Release Time: 2025-04-30Hits:
- Date:2025-04-30
- Title of Paper:Hexagonal GdScO3: An epitaxial high-κ dielectric for GaN
- Journal:Semiconductor Science and Technology
- Summary:GdScO 3 was deposited by pulsed laser deposition on two different templates suitable for III-N growth: metalorganic vapour phase epitaxial GaN (0 0 0 1) on sapphire and molecular beam epitaxial Y 2 O 3 on Si (1 1 1). The structure and crystallinity of the layers were determined as well as the band gap and permittivity of the material. It was found that GdScO 3 grows epitaxially and crystallizes hexagonally in contrast to the usually found orthorhombic or amorphous phases. A band gap and permittivity κ of 5.2 eV and 24 were found, respectively, making GdScO 3 a promising epitaxial gate dielectric for III-N transistor applications.
- Co-author:A Schäfer · A Besmehn · M. Luysberg · [8th Gang Niu] ·
- Translation or Not:No
- Date of Publication:2014-07-01
