Papers
Release Time: 2025-04-30Hits:
- Date:2025-04-30
- Title of Paper:Epitaxial ferromagnetic oxide thin films on silicon with atomically sharp interfaces
- Journal:Applied Physics Letters
- Summary:A bottleneck in the integration of functional oxides with silicon, either directly grown or using a buffer, is the usual formation of an amorphous interfacial layer. Here, we demonstrate that ferromagnetic CoFe2O4 films can be grown epitaxially on Si(111) using a Y2O3 buffer layer, and remarkably the Y2O3/Si(111) interface is stable and remains atomically sharp. CoFe2O4 films present high crystal quality and high saturation magnetization.
- Co-author:P. de Coux · R. Bachelet · B. Warot-Fonrose · [6th Gang Niu] ·
- Translation or Not:No
- Date of Publication:2014-07-07
