Auxiliary structure of nano-pinnacle prepared on silicon substrate: Improving the emission intensity by 9 times in SSI-LEDs
Release Time:2025-04-30
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- Date:
- 2025-04-30
- Title of Paper:
- Auxiliary structure of nano-pinnacle prepared on silicon substrate: Improving the emission intensity by 9 times in SSI-LEDs
- Journal:
- Materials Science in Semiconductor Processing
- Summary:
- properties, electrical and optical characteristics of the proposed structure device are investigated. Non-uniform size and geometry of nano-pinnacles are prepared by wet-etching, and the most frequent geometry is ~230×140nm pyramids. With help of the nano-pinnacle structure, the electric field strength distributed on treated surface of the nano-pinnacle sample is enhanced by ~4 times, resulting in the increase of the density of conductive paths by 3.6 times. By exploring the electrical and optical results, the onset voltage of light emission is decreased by 60% from −7.6V to −3.4V, and the emission intensity and efficiency are improved by ~9 times and ~8 times, respectively compared with the traditional structure device of SSI-LEDs.
- Co-author:
- 刘凌光，王耀功，林媛媛，张小宁等
- Translation or Not:
- No
- Date of Publication:
- 2019-01-02