Influence of Oxidation Treatment on Ballistic Electron Surface-emitting Display of Porous Silicon
Release Time:2025-04-30
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- Date:
- 2025-04-30
- Title of Paper:
- Influence of Oxidation Treatment on Ballistic Electron Surface-emitting Display of Porous Silicon
- Journal:
- Thin Solid Films
- Summary:
- Two groups of porous silicon (PS) samples are treated by rapid
thermal oxidation (RTO) and electrochemical oxidation (ECO), respectively.
Scanning electron microscopy images show that PS samples are segmented
into two layers. Oxidized film layer is formed on the top surface of PS
samples treated by RTO while at the bottom of PS samples treated by ECO.
Both ECO and RTO treatment can make emission current density, diode
current density, and emission efficiency of PS increase with the bias voltage
increasing. The emission current density and the field emission enhancement
factor β of PS sample treated by RTO are larger than that treated by ECO.
The Fowler-Nordheim curves of RTO and ECO samples are linear which
indicates that high electric field exists on the oxidized layer and field
emission occurs whether PS is treated by RTO or ECO.
- Co-author:
- Wentao Du, Xiaoning Zhang, Yujuan Zhang, W J Wang
- Volume:
- 2011, in press
- Translation or Not:
- No
- Date of Publication:
- 2012-07-12