铷离子掺杂的高效率钙钛矿发光二极管（时一斐，ACS Appl. Mater. Interfaces 2018 DOI: 10.1021/acsami.8b00079）
发布时间：2018-03-19
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- 发布时间：
- 2018-03-19
- 文章标题：
- 铷离子掺杂的高效率钙钛矿发光二极管（时一斐，ACS Appl. Mater. Interfaces 2018 DOI: 10.1021/acsami.8b00079）
- 内容：
Rubidium Doping for Enhanced Performance of Highly Efficient Formamidinium-Based Perovskite Light-Emitting Diodes
Organometal halide perovskites (OHPs) have become the most promising optoelectronic material in the past few years with a myriadof applications in the photovoltaic, light-emitting, and laser fields. However, for light-emitting applications, the low photoluminescencequantum yield (PLQY) of OHP film is critical to hinder the efficiency improvement of OHP-film-based light-emitting diodes (PeLEDs).Herein, we study the effects of rubidium incorporation on the crystal growth, structure, and photoelectric and optical properties of formamidinium-lead-bromide-based (FAPbBr3-based) perovskite films and light-emission performance of PeLEDs. It is found that rubidium incorporation cansignificantly enhance the PLQY of FAPbBr3 film by suppressing the trap density and thus improve the withstand voltage as well as the performanceof PeLEDs. When FAPbBr3 film with optimal Rb doping ratio is employed as the light emitter of PeLEDs, the maximum luminance and currentefficiency is enhanced by ∼10-fold and ∼5-fold to 66 353 cd/m2 and 24.22 cd/A compared to the controlled device, respectively, the recordperformance based on FAPbBr3 PeLEDs so far. The enhanced performance can be chiefly attributed to the increase of PLQY and decreaseof trap defect density of perovskite film with rubidium incorporation. Our research is expected to stimulate the development of OHPs for thenext-generation lighting and display fields.