一种二氧化锡中空立方体的制备方法
- Release Time:2025-04-30
- Hits:
Title:
一种二氧化锡中空立方体的制备方法Disigner of the Invention:
杨生春, 刘锐,杨志懋,丁秉钧,宋晓平Type of Patent:
InventApplication Number:
ZL201010275719.8Service Invention or Not:
NoApplication Date:
2010-02-01Date:
2025-04-30
- Prev One:一种Pt、Pd及Pt-M(M=Cu,Ag,Pd)合金纳米粒子的制备方法
- Next One:一种Pt纳米片的制备方法
