夏明岗
- 教授
- Supervisor of Doctorate Candidates
- Supervisor of Master's Candidates
- E-Mail:
- Date of Employment:2002-04-09
- Education Level:With Certificate of Graduation for Doctorate Study
- Professional Title:教授
- Status:Employed
- Alma Mater:西安交通大学
- College:School of Physics
- Discipline:Physics
- Papers
Gate capacitance coupling of singled-walled carbon nanotube thin-film transistors
Release Time:2025-04-30 Hits:
- Date:2025-04-30
- Title of Paper:Gate capacitance coupling of singled-walled carbon nanotube thin-film transistors
- Journal:Appl. Phys. Lett.
- Summary:The electrostatic coupling between singled-walled carbon nanotube (SWCNT) networks/arrays and planar gate electrodes in thin-film transistors (TFTs ) is analyzed both in the quantum limit with an analytical model and in the classical limit with finite-element modeling. The computed capacitance depends on both the thickness of the gate dielectric and the average spacing between the tubes, with some dependence on the distribution of these spacings. Experiments on transistors that use submonolayer, random networks of SWCNTs verify certain aspects of these calculations. The results are important for the development of networks or arrays of nanotubes as active layers in TFTs and other electronic devices. (c) 2007 American Institute of Physics.
- Co-author:Q. Cao, M. G. Xia, C. Kocabas, et. al.
- Volume:90
- Page Number:023516
- Translation or Not:No
- Date of Publication:2007-01-08