Gallium ion implantation greatly reduces thermal conductivity and enhances electronic one of ZnO nanowires

Release Time:2025-04-30  Hits:

• Date:2025-04-30
• Title of Paper:Gallium ion implantation greatly reduces thermal conductivity and enhances electronic one of ZnO nanowires
• Journal:AIP Adv.
• Summary:The electrical and thermal conductivities are measured for individual zinc oxide
  (ZnO) nanowires with and without gallium ion (Ga+) implantation at room temperature.
  Our results show that Ga+ implantation enhances electrical conductivity
  by one order of magnitude from 1.01 × 10^3 Ohm^−1m^−1 to 1.46 × 10^4 Ohm^−1m^−1 and
  reduces its thermal conductivity by one order of magnitude from 12.7 Wm^−1K^−1 to
  1.22 Wm^−1K^−1 for ZnO nanowires of 100 nm in diameter. The measured thermal
  conductivities are in good agreement with those in theoretical simulation. The increase
  of electrical conductivity origins in electron donor doping by Ga+ implantation
  and the decrease of thermal conductivity is due to the longitudinal and transverse
  acoustic phonons scattering by Ga+ point scattering. For pristine ZnO nanowires,
  the thermal conductivity decreases only two times when its diameter reduces from
  100 nm to 46 nm. Therefore, Ga+-implantation may be a more effective method than
  diameter reduction in improving thermoelectric performance.
• Co-author:M. G Xia*, Z. F. Cheng, J. Y. Han, M. R. Zheng, C. H. Sow, et al.
• Volume:4
• Page Number:057128
• Translation or Not:No
• Date of Publication:2014-05-27