Minggang Xia
- Professor
- Supervisor of Doctorate Candidates
- Supervisor of Master's Candidates
- Name (English):Minggang Xia
- E-Mail:
- Date of Employment:2002-04-09
- Education Level:With Certificate of Graduation for Doctorate Study
- Business Address:仲英楼B812
- Degree:Doctor
- Professional Title:Professor
- Status:Employed
- Alma Mater:西安交通大学
- College:School of Physics
- Discipline:Physics
- Papers
The role of sulfur supersaturation in the growth of single-crystalline MoS2 on stepped sapphire
Release Time:2026-03-23 Hits:
- Date:2026-03-23
- Impact Factor:6.9
- DOI Number:10.1016/j.apsusc.2026.165967
- Title of Paper:The role of sulfur supersaturation in the growth of single-crystalline MoS2 on stepped sapphire
- Journal:APPLIED SURFACE SCIENCE
- Summary:Step-guided growth has emerged as a scalable pathway for synthesizing non-centrosymmetric 2D TMD single crystals. A key challenge arises when nucleation kinetically prefers the terraces over the step edges, thereby disrupting epitaxial alignment. Although the epitaxial interface is a critical factor, it is ultimately the thermodynamic driving forces that are essential for overcoming the kinetic barrier to step-edge nucleation; however, a fundamental understanding of these forces has been lacking. Herein, we demonstrated that the sulfur supersaturation provides a strong driving force for adatom on terrace planes to diffuse toward step edges, completely suppressing terrace nucleation and achieving near-unity unidirectional alignment in wafer-scale molybdenum disulfide (MoS2). This thermodynamic control enables deterministic morphological evolution from 2D flakes to 1D nanoribbons. The synthesized single-crystalline MoS2 exhibits exceptional uniformity and room-temperature mobility up to 91 cm2/V & sdot;s. This work provides valuable insights into the growth mechanisms underlying CVDgrown MoS2 single crystals on stepped sapphire and solves the persistent challenge of step-edge decoupling during terrace-dominated nucleation, enhancing material quality and reproducibility for TMD single-crystal electronics.
- Co-author:韩晓娜,L. N. Chen,S. D. He,S. J. Duan,Q. Lou
- First Author:程瞾芳
- Correspondence Author:M. G. Xia
- Document Code:001677268200005
- Document Type:J
- Volume:727
- Page Number:165967
- Translation or Not:No
- Date of Publication:2026-01-16
- Included Journals:SCI
