Large-area single-crystal TMDs growth modulated by sapphire substrate

Release Time:2025-04-30  Hits:

• Date:2025-04-30
• Title of Paper:Large-area single-crystal TMDs growth modulated by sapphire substrate
• Journal:Nanoscale
• Summary:https://pcv3-rsc-live.s3.amazonaws.com/1b27d5594a5ab2ea525e3613b6b8a6/NR_d3nr05400d_edit_report.pdf
  Transition metal dichalcogenides (TMDs) have recently attracted extensive research due to their unique physical and chemical properties, but the large-area preparation of TMDs single crystal is still facing a great challenge. Chemical vapor deposition (CVD) is an effective method to synthesize large-area and high-quality TMDs films, in which sapphire as a suitable substrate plays a crucial role in anchoring the source materials, promoting the nucleation and modulating the epitaxial growth. In this review, we provide an insightful overview about different epitaxial mechanisms and growth behaviors associated with the atomic structure of sapphire surface and the growth parameters. Firstly, we summarize three epitaxial growth mechanisms of TMDs on sapphire substrates, which are van der Waals epitaxy, step-guided epitaxy, and dual-coupling-guided epitaxy. Secondly, we introduce the effects of polishing, cutting, and annealing processing of the sapphire surface on the TMDs growth. Finally, we discuss the influence of other growth parameters, such as temperature, pressure, carrier gas, and substrate position on the growth kinetics of TMDs. This review might give deep insight into the controllable growth of large-area single-crystal TMDs on sapphire, which will propel their practical applications in highperformance nanoelectronics and optoelectronics.
• Co-author:L. N. Chen, Z. F. Cheng, S. D. He, X. D. Zhang, K. L. Deng, D. H. Zong, Z. P. Wu, M. G. Xia*
• Volume:16
• Page Number:978
• Translation or Not:No
• Date of Publication:2024-01-18